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    LED CHIP HAVING ESD PROTECTION
    1.
    发明申请
    LED CHIP HAVING ESD PROTECTION 审中-公开
    LED芯片具有防静电保护功能

    公开(公告)号：WO2015005706A1

    公开(公告)日：2015-01-15

    申请号：PCT/KR2014/006222

    申请日：2014-07-10

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： LEE, Seom Geun ,  YOON, Yeo Jin ,  KIM, Jae Kwon ,  LEE, So Ra ,  YANG, Myoung Hak

    IPC: H01L33/48 ,  H01L33/62

    CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

    Abstract translation: 这里公开了具有ESD保护的发光二极管芯片。 示例性实施例提供一种倒装芯片型发光二极管芯片，其包括在基板上对准的发光二极管部分和设置在基板上并连接到发光二极管部分的反并联二极管部分。 在倒装芯片型发光二极管芯片内，发光二极管部分与反并联二极管部分一起放置，从而提供显示出对静电放电具有很强抵抗力的发光二极管芯片。

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE
    3.
    发明公开
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE 审中-公开
    发光元件和发光二极管

    公开(公告)号：EP3258507A2

    公开(公告)日：2017-12-20

    申请号：EP16749413.7

    申请日：2016-02-04

    Applicant: Seoul Viosys Co., Ltd

    Inventor： KIM, Jong Kyu ,  LEE, So Ra ,  YOON, Yeo Jin ,  KIM, Jae Kwon ,  LEE, Joon Sup ,  KANG, Min Woo ,  OH, Se Hee ,  KIM, Hyun A ,  LIM, Hyoung Jin

    IPC: H01L33/64 ,  H01L33/38 ,  H01L33/08 ,  H01L33/58 ,  H01L33/60

    CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

    Abstract translation: 发光元件包括发光结构，该发光结构包括第一导电半导体层，第二导电半导体层以及插入在第一导电半导体层和第二导电半导体层之间的有源层; 第一接触电极和第二接触电极，位于所述发光结构上，并分别与所述第一导电半导体层和所述第二导电半导体层欧姆接触; 覆盖第一接触电极和第二接触电极的一部分以绝缘第一接触电极和第二接触电极的绝缘层; 电连接到所述第一接触电极和所述第二接触电极中的每一个的第一电极焊盘和第二电极焊盘; 以及辐射焊盘，形成在绝缘层上，并辐射从发光结构产生的热量。

    MULTI-WAVELENGTH LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
    4.
    发明公开
    MULTI-WAVELENGTH LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开

    公开(公告)号：EP4113606A1

    公开(公告)日：2023-01-04

    申请号：EP21760138.4

    申请日：2021-02-25

    Applicant: Seoul Viosys Co., Ltd

    Inventor： LEE, Chung Hoon ,  CHO, Dae Sung ,  LEE, So Ra

    IPC: H01L25/075 ,  H01L33/26 ,  H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00

    Abstract: Alight emitting element according to an embodiment comprises: a short-wavelength light emitting unit; a long-wavelength light emitting unit; and a coupling layer which couples the short-wavelength light emitting unit to the long-wavelength light emitting unit, wherein each of the short-wavelength light emitting unit and the long-wavelength light emitting unit comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, the active layer of the long-wavelength light emitting unit contains more indium (In) than that of the short-wavelength light emitting unit, and the short-wavelength light emitting unit emits light having a wavelength shorter than that of the long-wavelength light emitting unit.

    LIGHT EMITTING DIODE CHIP
    5.
    发明公开
    LIGHT EMITTING DIODE CHIP 审中-公开
    发光二极管芯片

    公开(公告)号：EP3264476A1

    公开(公告)日：2018-01-03

    申请号：EP17185126.4

    申请日：2011-06-13

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： HEO, Min Chan ,  JIN, Sang Ki ,  KIM, Jong Kyu ,  SHIN, Jin Cheoul ,  LEE, So Ra ,  LEE, Sum Geun

    IPC: H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

    CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips (100; 200; 200a). An LED chip (100; 200; 200a) according to an exemplary embodiment includes a substrate (21); a light emitting structure (30) arranged on the substrate (21); and an alternating lamination bottom structure (43) arranged under the substrate (21). The alternating lamination bottom structure (43) includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.

    Abstract translation: 本发明的示例性实施例提供了发光二极管（LED）芯片（100; 200; 200a）。 根据示例性实施例的LED芯片（100; 200; 200a）包括基板（21）;以及基板 设置在所述基板（21）上的发光结构（30）; 和布置在基底（21）下方的交替层压底部结构（43）。 交替层压底部结构（43）包括多个电介质对，每个电介质对包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，第一折射率大于第二折射率 折射率。

    SINGLE-CHIP MULTI-BAND LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE HAVING SAME
    6.
    发明公开
    SINGLE-CHIP MULTI-BAND LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE HAVING SAME 审中-公开

    公开(公告)号：EP4254522A1

    公开(公告)日：2023-10-04

    申请号：EP22756504.1

    申请日：2022-02-17

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： LEE, Chung Hoon ,  BAEK, Yong Hyun ,  KANG, Ji Hun ,  MIN, Dae Hong ,  CHO, Dae Sung ,  LEE, So Ra

    IPC: H01L33/20 ,  H01L33/32 ,  H01L33/00 ,  H01L33/04 ,  H01L33/08

    Abstract: An embodiment of the present disclosure comprises: an n-type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; an active layer disposed on the V-pit generation layer, the active layer including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer; a p-type nitride semiconductor layer positioned on the active layer; and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and positioned adjacent to the active layer, wherein the first sub-emission region may emit light having a peak wavelength of a shorter wavelength region than that of the first well region, and the light emitted through the n-type nitride semiconductor layer or the p-type nitride semiconductor layer is within the range of CIE color coordinates (X, Y) in which 0.205≤X≤0.495 and 0.265≤Y≤0.450.

    DISPLAY DEVICE HAVING MICRO LED MODULE
    7.
    发明公开
    DISPLAY DEVICE HAVING MICRO LED MODULE 审中-公开

    公开(公告)号：EP4092658A1

    公开(公告)日：2022-11-23

    申请号：EP21743769.8

    申请日：2021-01-20

    Applicant: Seoul Viosys Co., Ltd

    Inventor： CHO, Dae Sung ,  LEE, So Ra

    IPC: G09F9/302 ,  H01L25/075 ,  H01L27/12 ,  H01L25/16 ,  H01L33/48 ,  H01L33/20

    Abstract: A display device is provided. The display device comprises: a display substrate; first micro LED modules aligned on the display substrate; and at least one second micro LED module arranged between the first micro LED modules, wherein each of the first micro LED modules includes a first substrate and micro LEDs arranged on the first substrate, the second micro LED module includes a second substrate and micro LEDs arranged on the second substrate, and the second substrate bridge-connects two neighboring first substrates.

    LIGHT-EMITTING MODULE AND DISPLAY DEVICE HAVING SAME
    10.
    发明公开
    LIGHT-EMITTING MODULE AND DISPLAY DEVICE HAVING SAME 审中-实审

    公开(公告)号：EP4340028A1

    公开(公告)日：2024-03-20

    申请号：EP22807912.5

    申请日：2022-05-16

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： CHO, Dae Sung ,  LEE, So Ra ,  LEE, Chung Hoon

    IPC: H01L27/15 ,  H01L33/50 ,  H01L33/52 ,  H01L33/58

    Abstract: Provided are a light-emitting module and a display device having same. A light-emitting module according to an embodiment comprises: a substrate; a plurality of light-emitting elements arranged on the substrate and emitting light having a first wavelength; a partition wall structure formed between the light-emitting elements; and a wavelength converter for converting the light having the first wavelength emitted from the light-emitting elements to light having another wavelength. The wavelength converter comprises: a first layer comprising a light absorption layer and a first wavelength conversion part; and a second layer comprising a light absorption layer and a second wavelength conversion part, and the first wavelength conversion part in the first layer is transversely spaced apart from the second wavelength conversion part in the second layer in a plan view.

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