公开(公告)号：JPH10270440A

公开(公告)日：1998-10-09

申请号：JP1849098

申请日：1998-01-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： CALEGARI CAMILLA ,  CARRARA ANNA ,  FRATIN LORENZO ,  RIVA CARLO

IPC: H01L23/28 ,  H01L21/316 ,  H01L21/8247 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532 ,  H01L27/115 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To perfectly seal the ends of the device by forming recesses into first inner sections of a main surface of a planarized amorphous material layer- made morphologic structure within zones having continuous parts. SOLUTION: A mask 34 in a zone of a device end morphologic structure 30 is opened up to the ends of the device. A second polysilicon etching at an active region 8 located at the left of a field oxide film region 7 forms recesses R1 in a substrate 6. The recesses R1 locate in inner regions 3' of the structure 30 inside which a polymer circuit mask 35 having openings 36 is provided to form other recesses R2 at unmasked surface of Si, thus obtaining the recesses different in depth. This reduces the gradient of the steps between the recess bottom and Si surface 5.