公开(公告)号：FR2773266B1

公开(公告)日：2001-11-09

申请号：FR9716882

申请日：1997-12-31

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PIO FEDERICO ,  PIZZUTO OLIVIER

IPC: H01L21/28 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/092 ,  H01L27/105 ,  H01L27/115 ,  H01L27/088

Abstract: A structure of electronic devices integrated in a semiconductor substrate with a first type of conductivity comprising at least a first HV transistor and at least a second LV transistor, each having a corresponding gate region. Said first HV transistor has lightly doped drain and source regions with a second type of conductivity, and said second LV transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the respective gate region and a second portion which is more heavily doped and comprises a silicide layer.

公开(公告)号：FR2773266A1

公开(公告)日：1999-07-02

申请号：FR9716882

申请日：1997-12-31

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PIO FEDERICO ,  PIZZUTO OLIVIER

IPC: H01L21/28 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/092 ,  H01L27/105 ,  H01L27/115 ,  H01L27/088

Abstract: An IC structure includes a high voltage transistor, having a lightly doped drain region (6), and a low voltage transistor, having source/drain regions (9, 8) with heavily doped silicide layers. A structure of electronic devices integrated in a first conductivity type semiconductor substrate (1) comprising a high voltage transistor, with a lightly doped drain region (6) of second conductivity type, and a low voltage transistor with second conductivity type source (9) and drain (8) regions, each having a lightly doped portion adjacent the gate region (5) and a more heavily doped second portion consisting of a silicide layer. Independent claims are also included for processes for producing the above IC structure.

公开(公告)号：FR2758022B1

公开(公告)日：1999-02-19

申请号：FR9616355

申请日：1996-12-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： TAILLIET FRANCOIS PIERRE ,  PIZZUTO OLIVIER

IPC: H02M3/07 ,  H03K3/03 ,  H03K4/58 ,  H02M1/08 ,  G11C16/06 ,  G11C5/14

Abstract: An oscillator circuit produces first and second oscillating logic signals that are of a same frequency and are non-overlapping in a first logic state. This oscillator includes a flip-flop circuit to produce third and fourth oscillating logic signals of opposite polarities, this flip-flop circuit being driven by first and second driving logic signals. First and second logic gates receive the third and fourth logic signals and produce the first and second logic signals, the logic state transitions in the first and second logic signals being produced as a function of the logic state transitions of the third and fourth logic signals. The first and second logic gates are organized so as to introduce a delay into the transitions from a second logic state to the first logic state, in the first and second logic signals, with respect to transitions in the third and fourth logic signals. First and second RC type circuits produce the first and second driving signals to control the transitions in the third and fourth logic signals. The oscillator circuit can be used in a switch-over control circuit for a load pump type of high-voltage generator.

公开(公告)号：FR2758022A1

公开(公告)日：1998-07-03

申请号：FR9616355

申请日：1996-12-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： TAILLIET FRANCOIS PIERRE ,  PIZZUTO OLIVIER

IPC: H02M3/07 ,  H03K3/03 ,  H03K4/58 ,  H02M1/08 ,  G11C16/06 ,  G11C5/14

Abstract: The command circuit oscillator circuit has R-C oscillator circuits (Q1,Q2,RX;Q3,Q4,RN) producing driving signals (SX,SN) for a flip-flop circuit (G1,G2). The flip-flop circuit (G1,G2) produces output logic signals (QX,QN) of opposite polarities. The second logic signals are passed to logic gates (TS1,TS2) which introduce a delay and outputting a second set of logic signals (CKX,CKN).