Biquadratic basic cell for programmable analog time-continuous filter
    1.
    发明公开
    Biquadratic basic cell for programmable analog time-continuous filter 失效
    Biquadratische Basiszellefüranalogen programmierbaren zeitkontinuierlichen过滤器

    公开(公告)号:EP0847137A1

    公开(公告)日:1998-06-10

    申请号:EP96830603.5

    申请日:1996-12-04

    CPC classification number: H03H11/0433

    Abstract: The invention relates to an elementary biquadratic cell for programmable time-continous analog filters, which is placed between a first supply voltage reference (Vdd) and a second voltage reference (GND) and is of a type having at least one pair of input terminals (I31,I31') and first (O31,O31') and second (O32,O32') pairs of output terminals, and having a pair of half-cells (31,31'), which half-cells are structurally identical with each other and each comprised of at least a first transistor (T31,T31') placed between the first (Vdd) and the second (GND) voltage reference and having a base terminal connected to a respective one of the input terminals (I31,I31').
    Each half-cell (31,31') further comprises second (T32,T32') and third (T33,T33') transistors placed between the first (Vdd) and second (GND) voltage references, the second transistor (T32,T32') having a base terminal connected to the first output terminal (O31,O31') of the first pair of output terminals and a collector terminal connected to the second output terminal (O32,O32') of the second pair of output terminals, and the third transistor (T33,T33') having an emitter terminal connected to the first output terminal (O31,O31') of the first pair of output terminals ad a base terminal connected to the second output terminal (O32',O32) of the second pair of output terminals of the other half-cell.

    Abstract translation: 本发明涉及一种用于可编程时间连续模拟滤波器的基本二次电池,其放置在第一电源电压基准(Vdd)和第二参考电压(GND)之间,并且是具有至少一对输入端子 I31,I31')和第一(O31,O31')和第二(O32,O32')输出端对,并具有一对半电池(31,31'),这些半电池与每个半电池结构相同 至少第一晶体管(T31,T31')由第一(Vdd)和第二(GND)电压基准之间的第一晶体管(T31,T31')构成,并具有连接到输入端子(I31,I31' )。 放置在第一(Vdd)和第二(GND)电压基准之间的第二(T32,T32')和第三(T33,T33')晶体管的每个半电​​池(31,31')还包括第二晶体管(T32,T32' ')具有连接到第一对输出端子的第一输出端子(O31,O31')的基极端子和与第二对输出端子的第二输出端子(O32,O32')连接的集电极端子,以及 第三晶体管(T33,T33')具有连接到第一对输出端子的第一输出端子(O31,O31')的发射极端子和连接到第二输出端子的第二输出端子(O32',O32)的基极端子 另一个半电池的第二对输出端子。

Patent Agency Ranking