Abstract:
The device comprises a first chain of scanning cells (2) located at the stimulation input of each respective functional block (1) of the integrated circuit and a second chain of scanning cells (3) located at the assessment output of each respective functional block (1) of the integrated circuit. Each cell (2, 3) comprises a master part (M), a slave part (S) and switching means (8, 50) to alternately enable said master (M) and slave parts (S) under the control of respective master clock and slave clock signals coincident with opposite phases of a scanning clock signal (SCK) having a substantially square wave. With each pair of chains of scanning cells (2, 3) there are associated clock generation means (25, 26) to locally obtain said master and slave clocks from said scanning clock (SCK).
Abstract:
The circuit comprises first switching means (11) which receive at input a system clock (XTALIN) normally provided for the operation of the integrated circuit and produce at output a machine clock (CK) normally coincident with the system clock (XTALIN), means for clamping (13) the first switching means (11) which after a firing signal of the serial analysis (ENSH) determine the clamping of the state of the machine clock (CK) and second switching means (14) which receive at input the system clock (XTALIN) and are fired by the firing signal (ENSH) to produce a scanning clock (SCK) which repeats the system clock (XTALIN) in an inverted or non-inverted manner according to the state in which the machine clock (CK) has been clamped.
Abstract:
Each common source region of the cells of a row of a FLASH-EPROM matrix may be segmented and each segment is individually connected to a secondary source line patterned in a second level metal layer by means of a plurality of contacts between each common source region and patterned portions of a first level metal and through as many interconnection vias between the latter patterned portions of metal 1 and the relative secondary source line patterned in metal 2. The secondary source lines are brought out of the matrix orthogonally to the bit lines and may be connected to a dedicated selection circuitry, thus permitting the erasing by groups or banks of cells of the FLASH-EPROM memory.
Abstract:
The device comprises a first chain of scanning cells (2) located at the stimulation input of each respective functional block (1) of the integrated circuit and a second chain of scanning cells (3) located at the assessment output of each respective functional block (1) of the integrated circuit. Each cell (2, 3) comprises a master part (M), a slave part (S) and switching means (8, 50) to alternately enable said master (M) and slave parts (S) under the control of respective master clock and slave clock signals coincident with opposite phases of a scanning clock signal (SCK) having a substantially square wave. With each pair of chains of scanning cells (2, 3) there are associated clock generation means (25, 26) to locally obtain said master and slave clocks from said scanning clock (SCK).
Abstract:
In a microprocessor system provided with integrated DMA channels for transferring data from peripherals associated with the microprocessor and internal and/or external data storage physical resources of the microprocessor system and viceversa, a request for a data transfer in DMA mode is accepted also during a wait for interrupt (WFI) state of the microprocessor, whose CPU is momentarily restored to full operativity for the time necessary for completing the data transfer in DMA mode before being returned to the "power down" condition of a wait for interrupt state. Power consumption is reduced and data transactions are performed swiftly.
Abstract:
The circuit comprises first switching means (11) which receive at input a system clock (XTALIN) normally provided for the operation of the integrated circuit and produce at output a machine clock (CK) normally coincident with the system clock (XTALIN), means for clamping (13) the first switching means (11) which after a firing signal of the serial analysis (ENSH) determine the clamping of the state of the machine clock (CK) and second switching means (14) which receive at input the system clock (XTALIN) and are fired by the firing signal (ENSH) to produce a scanning clock (SCK) which repeats the system clock (XTALIN) in an inverted or non-inverted manner according to the state in which the machine clock (CK) has been clamped.
Abstract:
The circuit includes an input register (RI) and an output register (RU); an AND plane formed by vertical lines (Y), which are controlled by the input register, and by horizontal lines (L) which include normally-off transistors (TA) which are arranged in series between the power supply and the ground and are controlled by respective vertical lines of the AND plane; an OR plane formed by horizontal lines (S), which are controlled by the horizontal lines of the AND plane, by vertical lines (U) between the power supply and the output register, and by normally-off transistors (TO) which can be connected between the ground and selected vertical lines and are controlled by respective horizontal lines of the OR plane. According to the invention, the connections toward the ground and toward the power supply of the horizontal lines of the AND plane are respectively constituted by normally-off transistors (TV) and by normally-on transistors (TP) which can be controlled by a first clock signal (CK1 ∼ ); the connections between the horizontal lines of the OR plane and, furthermore, the power supply are constituted by respective normally-on transistors (TR) which can be controlled by a second clock signal (CK2 ∼ ), and the connections between the horizontal lines of the AND plane and the horizontal lines of the OR plane are constituted by respective pairs of normally-on transistors (TB) and normally-off transistors (TC) arranged in series between the power supply and the ground. In each pair, the normally-on transistor is controlled by the horizontal line of the AND plane, the normally-off transistor is controlled by a third clock signal (CK2), and the horizontal line of the OR plane is connected to the node between the two transistors of the pair.
Abstract:
Each common source region of the cells of a row of a FLASH-EPROM matrix may be segmented and each segment is individually connected to a secondary source line patterned in a second level metal layer by means of a plurality of contacts between each common source region and patterned portions of a first level metal and through as many interconnection vias between the latter patterned portions of metal 1 and the relative secondary source line patterned in metal 2. The secondary source lines are brought out of the matrix orthogonally to the bit lines and may be connected to a dedicated selection circuitry, thus permitting the erasing by groups or banks of cells of the FLASH-EPROM memory.