公开(公告)号：EP0391561B1

公开(公告)日：1995-07-12

申请号：EP90302868.6

申请日：1990-03-16

Applicant: SGS-Thomson Microelectronics Limited

Inventor： Teague, Martin John ,  Strachan, Andrew Derek ,  Henry, Martin Andrew

IPC: H01L21/82 ,  H01L21/225 ,  H01L21/266

CPC classification number: H01L21/02238 ,  H01L21/02255 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/31662 ,  H01L21/823892 ,  Y10S148/07

公开(公告)号：EP0391561A2

公开(公告)日：1990-10-10

申请号：EP90302868.6

申请日：1990-03-16

Applicant: SGS-Thomson Microelectronics Limited

Inventor： Teague, Martin John ,  Strachan, Andrew Derek ,  Henry, Martin Andrew

IPC: H01L21/82 ,  H01L21/225 ,  H01L21/266

CPC classification number: H01L21/02238 ,  H01L21/02255 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/31662 ,  H01L21/823892 ,  Y10S148/07

Abstract: A method of forming a well of one conductivity type in a silicon substrate, which method comprises the steps of:-

(a) providing a silicon substrate having a first surface region thereof which is doped with a dopant of one conductivity type and a second surface region thereof which is doped with a dopant of opposite conductivity type, the first and second regions being covered by respective first and second portions of an oxide layer which has been grown on the silicon substrate, the first portion being thicker than the second portion;
(b) oxidizing the substrate thereby to increase the thickness of the oxide layer such that the difference in thickness between the first and second portions is reduced;
(c) heating the substrate to cause diffusion of the said dopant of one conductivity type thereby to form a well of said one conductivity type in the substrate and also diffusion of the said dopant of opposite conductivity type down into the substrate, the heating step being carried out before, during or after oxidizing step (b); and
(d) removing the oxide layer thereby to expose the substrate surface which has a step in the region of the well boundary.

Abstract translation: 一种在硅衬底中形成一种导电类型的阱的方法，该方法包括以下步骤： - （a）提供具有掺杂有一种导电类型的掺杂剂的第一表面区域和第二表面的硅衬底 其掺杂有相反导电类型的掺杂剂的第一和第二区域，所述第一和第二区域被在硅衬底上生长的氧化物层的相应的第一和第二部分覆盖，第一部分比第二部分厚; （b）氧化基板，从而增加氧化物层的厚度，使得第一和第二部分之间的厚度差减小; （c）加热衬底以引起一种导电类型的所述掺杂剂的扩散，从而在衬底中形成所述一种导电类型的阱，并且将相反导电类型的所述掺杂剂扩散到衬底中，加热步骤为 在氧化步骤（b）之前，期间或之后进行; 和（d）去除氧化物层，从而露出在边界区域中具有台阶的衬底表面。 Ť

公开(公告)号：EP0391561A3

公开(公告)日：1992-01-02

申请号：EP90302868.6

申请日：1990-03-16

Applicant: SGS-Thomson Microelectronics Limited

Inventor： Teague, Martin John ,  Strachan, Andrew Derek ,  Henry, Martin Andrew

IPC: H01L21/82 ,  H01L21/225 ,  H01L21/266

CPC classification number: H01L21/02238 ,  H01L21/02255 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/31662 ,  H01L21/823892 ,  Y10S148/07

Abstract: A method of forming a well of one conductivity type in a silicon substrate, which method comprises the steps of:-
(a) providing a silicon substrate having a first surface region thereof which is doped with a dopant of one conductivity type and a second surface region thereof which is doped with a dopant of opposite conductivity type, the first and second regions being covered by respective first and second portions of an oxide layer which has been grown on the silicon substrate, the first portion being thicker than the second portion; (b) oxidizing the substrate thereby to increase the thickness of the oxide layer such that the difference in thickness between the first and second portions is reduced; (c) heating the substrate to cause diffusion of the said dopant of one conductivity type thereby to form a well of said one conductivity type in the substrate and also diffusion of the said dopant of opposite conductivity type down into the substrate, the heating step being carried out before, during or after oxidizing step (b); and (d) removing the oxide layer thereby to expose the substrate surface which has a step in the region of the well boundary.