公开(公告)号：EP0587401A2

公开(公告)日：1994-03-16

申请号：EP93307036.9

申请日：1993-09-07

Applicant: SGS-Thomson Microelectronics Limited

Inventor： Wyborn, Graeme Michael ,  McGee, Christopher ,  Nicholls, Howard Charles

IPC: H01L21/3205 ,  H01L21/90 ,  C23C16/14

CPC classification number: H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76877 ,  H01L21/76879

Abstract: A method of fabricating a tungsten contact in a semiconductor device, the method including the steps of: (a) providing a silicon wafer structure including a dielectric layer and an underlying layer selected from a semiconductor or electrically conductive material, the dielectric layer being patterned to expose a contact portion of the underlying layer; and (b) depositing by chemical vapour deposition a tungsten layer over the dielectric layer and the contact portion, the deposition being carried out by reaction of a tungsten- containing component and a reducing agent which are introduced into the vicinity of the silicon wafer structure, the deposition step having a first phase in which the process conditions are controlled to form a seed layer of tungsten on the dielectric layer and a second phase in which the process conditions are modified from the first phase to form a blanket tungsten layer over the seed layer which acts as an adhesion layer between the dielectric layer and the blanket tungsten layer. The invention also provides a semiconductor device incorporating a tungsten contact which is disposed in a contact hole of a dielectric layer, the tungsten contact including a seed layer of tungsten which extends over the dielectric layer surface and an overlying layer of blanket tungsten.

Abstract translation: 一种在半导体器件中制造钨触点的方法，所述方法包括以下步骤：（a）提供包括介电层和选自半导体或导电材料的下层的硅晶片结构，所述电介质层被图案化 暴露下层的接触部分; 和（b）通过化学气相沉积在电介质层和接触部分上沉积钨层，沉积通过引入硅晶片结构附近的含钨组分和还原剂的反应进行， 沉积步骤具有第一阶段，其中控制工艺条件以在电介质层上形成钨的种子层，以及第二相，其中工艺条件从第一相修改以在种子层上形成覆盖钨层 其用作介电层和覆盖钨层之间的粘附层。 本发明还提供了一种结合有钨触点的半导体器件，该触点设置在电介质层的接触孔中，该钨触点包括在电介质层表面上延伸的钨晶种层和覆盖层钨层的覆盖层。

公开(公告)号：EP0587401A3

公开(公告)日：1996-03-06

申请号：EP93307036.9

申请日：1993-09-07

Applicant: SGS-Thomson Microelectronics Limited

Inventor： Wyborn, Graeme Michael ,  McGee, Christopher ,  Nicholls, Howard Charles

IPC: H01L21/3205 ,  H01L21/90 ,  C23C16/14

CPC classification number: H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76877 ,  H01L21/76879

Abstract: A method of fabricating a tungsten contact in a semiconductor device, the method including the steps of: (a) providing a silicon wafer structure including a dielectric layer and an underlying layer selected from a semiconductor or electrically conductive material, the dielectric layer being patterned to expose a contact portion of the underlying layer; and (b) depositing by chemical vapour deposition a tungsten layer over the dielectric layer and the contact portion, the deposition being carried out by reaction of a tungsten- containing component and a reducing agent which are introduced into the vicinity of the silicon wafer structure, the deposition step having a first phase in which the process conditions are controlled to form a seed layer of tungsten on the dielectric layer and a second phase in which the process conditions are modified from the first phase to form a blanket tungsten layer over the seed layer which acts as an adhesion layer between the dielectric layer and the blanket tungsten layer. The invention also provides a semiconductor device incorporating a tungsten contact which is disposed in a contact hole of a dielectric layer, the tungsten contact including a seed layer of tungsten which extends over the dielectric layer surface and an overlying layer of blanket tungsten.