公开(公告)号：BRPI0808885A2

公开(公告)日：2014-08-26

申请号：BRPI0808885

申请日：2008-02-29

Applicant: SHARP KK

Inventor： KITA MAKOTO ,  NAKAJIMA MUTSUMI ,  MORIYA YOSHIMIZU ,  KAISE YASUYOSHI

IPC: H01L21/336 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/20 ,  H01L21/322 ,  H01L29/786

Abstract: The active-matrix substrate (100) of the present invention satisfies d2>d1 and d2+A1/2>d3+L1/2, where d1 is the length of the shortest line segment that connects together a channel region (134) and a gettering region (112) as measured by projecting the line segment onto a line that connects together the channel region (134) of a TFT (130) and a source contact portion, d2 is the distance from the channel region (134) to the source contact portion (132c), d3 is the distance from the channel region (134) to a first end portion (110a), L1 is the length of the first end portion (110a), and A1 is the length of the source contact portion (132c).

公开(公告)号：DE60207769T2

公开(公告)日：2006-08-17

申请号：DE60207769

申请日：2002-02-22

Applicant: SHARP KK

Inventor： BROWNLOW MICHAEL JAMES ,  CAIRNS GRAHAM ANDREW ,  DACHS M-A ,  KAISE YASUYOSHI

IPC: G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  G09G3/20 ,  G09G3/36 ,  H01L21/336 ,  H01L29/786

Abstract: An active matrix device comprises an array of picture elements. Each picture element has an image element, such as an LCD cell (11) connected to a first storage capacitor 12 and arranged to be connected to a data line 4 by an thin film transistor 10 when activated by a scan signal on a scan line 6. A second storage capacitor 21 can be connected across the first capacitor 12 by means of another thin film transistor 20 when desired so as to increase the storage capacitance at the pixel.

公开(公告)号：AU2012246546B2

公开(公告)日：2014-08-07

申请号：AU2012246546

申请日：2012-04-18

Applicant: SHARP KK

Inventor： KAISE YASUYOSHI

IPC: G02F1/1368 ,  G02F1/1335 ,  H01L21/336 ,  H01L29/786

Abstract: The purpose of the present invention is to provide a liquid crystal display panel, which is capable of suppressing an increase of a parasitic capacitance between a source region and a drain region, while being provided with a structure wherein a plurality of gate electrodes are disposed on a continuous semiconductor layer. This liquid crystal display panel is provided with a thin film transistor (3) on the main surface (201u) of a first transparent substrate (201). The thin film transistor (3) includes: a base insulating film (4); a semiconductor layer (5), which linearly extends at least from a first portion (51) to a second portion (52); a source electrode (7); a drain electrode (8); and gate electrodes (9), which are disposed at two or more areas between the source electrode and the drain electrode so as to respectively cover the semiconductor layer (5) by having the gate insulating film (6) therebetween. Between the base insulating film (4) and the first transparent substrate (201), a light blocking film (11) that covers projection regions (10) of the gate electrodes (9) is disposed, said projection regions being on the main surface (201u). The light blocking film (11) is divided into a plurality of light blocking film elements (12). Each of the light blocking film elements (12) covers one or more projection regions (10).

公开(公告)号：GB2372620A

公开(公告)日：2002-08-28

申请号：GB0104786

申请日：2001-02-27

Applicant: SHARP KK

Inventor： BROWNLOW MICHAEL JAMES ,  CAIRNS GRAHAM ANDREW ,  DACHS CATHERINE ROSINDA MARIE ,  KAISE YASUYOSHI

IPC: G02F1/1368 ,  G02F1/1362 ,  G09F9/30 ,  G09F9/35 ,  G09G3/20 ,  G09G3/36 ,  H01L21/336 ,  H01L29/786 ,  G02F1/136

Abstract: An active matrix device comprises an array of picture elements. Each picture element has an image element, such as an LCD cell (11) connected to a first storage capacitor 12 and arranged to be connected to a data line 4 by an thin film transistor 10 when activated by a scan signal on a scan line 6. A second storage capacitor 21 can be connected across the first capacitor 12 by means of another thin film transistor 20 when desired so as to increase the storage capacitance at the pixel.

公开(公告)号：BRPI0917249A2

公开(公告)日：2015-11-10

申请号：BRPI0917249

申请日：2009-07-31

Applicant: SHARP KK

Inventor： YOSHIDA HIROSHI ,  TASAKA YASUTOSHI ,  KAISE YASUYOSHI

IPC: G02F1/1333 ,  G02F1/1337 ,  G02F1/1343

公开(公告)号：AU2003261945A1

公开(公告)日：2004-03-29

申请号：AU2003261945

申请日：2003-09-04

Applicant: SHARP KK

Inventor： KAISE YASUYOSHI ,  TANIGUCHI YOSHIHIRO ,  INUI TETSUYA ,  KUBOTA YASUSHI

IPC: B23K26/067 ,  C30B1/02 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268

Abstract: A method for growing a crystal through high-speed crystallization. The method comprises the steps of forming m-th and (m+1)-th k-th crystallized regions (202a, 202b) in an amorphous silicon film (201) by applying m-th and (m+1)-th band-like beams (m is an integer of 1 or more) to a thin film and forming m-th (k+1)-th crystallized region (203) continuous with the (m+1)-th k-th crystallized region (202b) in the amorphous silicon film (201) by applying the m-th band-like beam to a region that is spaced away from the m-th k-th crystallized region (202a) by a distance r (r is longer than the length of one crystal growth and that overlaps with the (m+1)-th k-th crystallized region (202b).

公开(公告)号：EP2492741A4

公开(公告)日：2013-09-04

申请号：EP10824695

申请日：2010-06-04

Applicant: SHARP KK

Inventor： INA KEIICHI ,  KAISE YASUYOSHI ,  YOSHIDA KEISUKE ,  MAEDA KAZUHIRO

IPC: G02F1/133 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36

CPC classification number: G09G3/3648 ,  G09G3/3614 ,  G09G3/3655 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0876

公开(公告)号：EP2267522A4

公开(公告)日：2012-03-07

申请号：EP08873915

申请日：2008-12-17

Applicant: SHARP KK

Inventor： MORIYA YOSHIMIZU ,  KAISE YASUYOSHI ,  YOSHIDA HIROSHI ,  TASAKA YASUTOSHI

IPC: G02F1/1339 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/13394 ,  G02F1/133707 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/13396 ,  G02F2001/13398 ,  G02F2201/40

公开(公告)号：EP2192442A4

公开(公告)日：2010-11-17

申请号：EP08752543

申请日：2008-05-09

Applicant: SHARP KK

Inventor： KAISE YASUYOSHI ,  YOSHIDA KEISUKE ,  MAEDA KAZUHIRO

IPC: G02F1/136 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1362

CPC classification number: G02F1/136213 ,  G02F1/133371 ,  G02F1/13338 ,  G02F1/136286 ,  G02F2201/40 ,  G06F3/0412

公开(公告)号：EP2320269A4

公开(公告)日：2012-05-02

申请号：EP09804696

申请日：2009-07-31

Applicant: SHARP KK

Inventor： YOSHIDA HIROSHI ,  TASAKA YASUTOSHI ,  KAISE YASUYOSHI

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1337

CPC classification number: G02F1/134309 ,  G02F1/133707 ,  G02F1/133753 ,  G02F1/136204 ,  G02F1/1393