Abstract:
A pixel cell, a method for manufacturing the same and an image sensor comprising the same are provided. The pixel cell comprises: a substrate (101); a photodiode (103), a pass transistor (107) and a floating diffusion structure (104) respectively formed on the substrate (101), in which the pass transistor (107) is formed between the photodiode (103) and the floating diffusion structure (104); and a PINNED structure (105), formed on the substrate (101) and connected with the floating diffusion structure (104), in which a reset voltage of the floating diffusion structure (104) is higher than a depletion voltage of the PINNED structure (105).