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公开(公告)号：JPH04280051A
公开(公告)日：1992-10-06
申请号：JP40941090
申请日：1990-12-28
Applicant: SHOWA ALUMINUM CORP
Inventor： ABE SHINYA , KATO YUTAKA , KITAMURA TERUO
Abstract: PURPOSE:To prevent the deterioration of the degree of vacuum in a vacuum container when an electron beam is emitted into the vacuum container. CONSTITUTION:A vacuum casing 5 fitted to a vacuum container 1 is provided. The vacuum casing 5 has an electron beam outgoing port 5a communicated to the inside of the vacuum container 1. An electron gun 6 is arranged in the vacuum casing 5 with its tip section faced to the electron beam outgoing port 5a side. A vacuum exhaust device 7 is connected to the vacuum casing 5. An electron beam is emitted by the electron gun 6 while the vacuum casing 5 is vacuum-exhausted by the vacuum exhaust device 7.
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公开(公告)号：JPH04218663A
公开(公告)日：1992-08-10
申请号：JP40297890
申请日：1990-12-18
Applicant: SHOWA ALUMINUM CORP
Inventor： ABE SHINYA , KATO YUTAKA , KITAMURA TERUO
IPC: C23C14/22
Abstract: PURPOSE:To execute degassing treatment to the surface of an irradiated part without changing the quality and the shape of a metallic material by irradiating the surface of the metallic material with electron beam. CONSTITUTION:The metallic material M to be treated is placed on a placing table 3 in a vacuum chamber 1 and the electron beam irradiates on the surface of metallic material from an electron gun 2. The reduction of the strength caused by heating and the change in shape in the case of thin metallic material M are not caused at an irradiated part with electron beam in the metallic material M incorporated gas in the irradiated part is effectively discharged and removed.
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公开(公告)号：JPH02254336A
公开(公告)日：1990-10-15
申请号：JP7767989
申请日：1989-03-28
Applicant: SHOWA ALUMINUM CORP
Inventor： KATO YUTAKA , ABE SHINYA , KITAMURA TERUO , ISOYAMA EIZO
IPC: G01N1/22
Abstract: PURPOSE:To prevent the attachment of a metallic material to the sample holding parts of manipulators by forming at least the surface that is in contact with a sample in the entire sample holding part of each manupilator with a ceramics surface. CONSTITUTION:A vacuum chamber 2 for surface-gas removal treatment as well as gas analysis is provided with sample holding manipulators 33 and 34 for holding a sample S at a position whose height corresponds to the position of a sample path 3. The inner surfaces of tubular-sample holding parts 33a and 34a of both manipulators 33 and 34 are coated with ceramics layers 35 and 36 of boron nitrides. Impurities incorporated in the boron nitride are less. Gas discharge is less in this material. Gas due to reaction with metal is not generated. Therefore, even if the device is heated in a high vacuum state, the rate of the gas discharge is small, and the accuracy of gas analysis can be improved. Even if ion-beam etching is performed on the surface of the sample S so as to obtain a surface active state, the sample holding parts 33a and 34a and the sample S are not bonded.
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公开(公告)号：JPH01308812A
公开(公告)日：1989-12-13
申请号：JP13891388
申请日：1988-06-06
Applicant: SHOWA ALUMINUM CORP
Inventor： HOTTA NORIYASU , YOSHIMOTO EIJI , TADA KIYOSHI , KITAMURA TERUO , JOGAN SHIGETOSHI
IPC: C01B21/072
Abstract: PURPOSE:To obtain the title powder with reduced cost, by refluxing the N2 are separated at a AlN powder collector to an Al powder feed section to reduce new feed of N2 gas. CONSTITUTION:Al powder in the container 3 of an Al powder feed section B is float on a N2 stream introduced through a blowing port 2a and fed to a reaction section C where this Al powder is reacted with N2 gas under heat from a heater 6 to form AlN. The AlN thus produced is then fed on a N2 gas stream via a connecting tube 9 into a collector D, separated from the N2 gas in the collection vessel 7 and deposited at the bottom. The N2 gas separated is circulated via a filter 11 and a circulating pump 13 equipped on a N2 gas reflux section E and then a reflux tube 12 to a powder container 3.
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公开(公告)号：JPH01141809A
公开(公告)日：1989-06-02
申请号：JP29878787
申请日：1987-11-26
Applicant: SHOWA ALUMINUM CORP
Inventor： TADA KIYOSHI , YOSHIMOTO EIJI , KITAMURA TERUO , ISOYAMA EIZO
IPC: C01B21/072
Abstract: PURPOSE:To obtain high purity AlN powder having a lower oxygen content by annealing a reaction tube made of an Al2O3 sintered body at a high temp. before a nitriding reaction, suspending Al powder with a flow of gaseous N2 in the reaction tube and causing a direct reaction. CONSTITUTION:High purity Al powder of 99.99% purity is put in a powder vessel 1 in a feed part A and gaseous N2 3 of 99.999% purity is fed into the vessel 1. At the same time, an agitator 4 is worked to send the Al powder to a reaction part B above the vessel 1 with a flow of gaseous N2. An Al2O3 tube is used as a reaction tube 5 in the part B, the internal temp. of the tube 5 is set at 1,550 deg.C with a heater 6 to cause a reaction and fine AlN powder is recovered in a capturing vessel 7 in a capturing part C. Before the nitriding reaction, the tube 5 must be annealed at 1,550 deg.C for 2hr under a flow of gaseous N2. O2 and moisture adsorbed on the inner wall of the tube 5 are removed, the amt. of impurities in the tube 5 is reduced to a minimum to prevent the contamination of the reactive atmosphere during the reaction and high purity AlN powder having a low oxygen content is obtd.
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Patent Agency Ranking
公开(公告)号：JPH01110234A
公开(公告)日：1989-04-26
申请号：JP26896687
申请日：1987-10-23
Applicant: SHOWA ALUMINUM CORP
Inventor： KATO YUTAKA , ABE SHINYA , KITAMURA TERUO , ISOYAMA EIZO
Abstract: PURPOSE:To achieve a lower cost along with a higher analysis accuracy of a gas in metal material, by performing a baking processing and an adsorption processing of a residual gas with a tubularly bulged section of the wall of a chamber. CONSTITUTION:A heating fluid is passed through a tubularly bulged section not illustrated to perform a baking processing of a vacuum chamber 1 and then, the vacuum chamber 1 is cooled to a normal temperature. Then, while a cooling fluid is passed through the tubularly bulged section, a vacuum exhaustion is performed with a vacuum exhauster 32. Then, a manipulator 2 with a sample S set thereon is inserted and an ion beam etching is performed by an inert gas ionized from an ion gun 3 to reduce the amount of impurities adsorbed on the surface of the sample S. Thereafter, the sample S is separated from the manipulator 2 to drop into a pot and melted by heating with a heater to extract an internal gas thereby determining the gas with a tetrapole mass filter.
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公开(公告)号：JPH06136495A
公开(公告)日：1994-05-17
申请号：JP29042092
申请日：1992-10-28
Applicant: SHOWA ALUMINUM CORP
Inventor： TANAKA KATSUMI , KATO YUTAKA , KITAMURA TERUO , ENOMOTO MASATOSHI , ISOYAMA EIZO
Abstract: PURPOSE:To form an oxide film having uniform thickness while obviating the necessity of the strict control of atmosphere by removing the surface layer of an Al foil, irradiating the Al foil with laser or plasma to form an oxide film having specific thickness, and then applying high temp. heating thereto. CONSTITUTION:The surface layer of an Al foil after foil rolling is removed by about 5Angstrom . The surface of the removed Al foil is irradiated with laser or plasma, by which an oxide film having 5-50Angstrom thickness is formed. Subsequently, high temp. heating is applied at
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公开(公告)号：JPH0650886A
公开(公告)日：1994-02-25
申请号：JP20369792
申请日：1992-07-30
Applicant: SHOWA ALUMINUM CORP
Inventor： YOSHIMOTO EIJI , KITAMURA TERUO
Abstract: PURPOSE:To make the position with reference to a through hole of a sample always definite by a method wherein the through hole which is used to inject the sample and to discharge a vapor is made in the upper part of the circumferential wall of a tubular body whose cross section is circular and a recessed part which is used to hold the sample is formed in a part corresponding to the through hole at the lower part of the circumferential wall. CONSTITUTION:An atomization furnace 1 is composed of a graphite tubular body 2 whose cross section is wholly circular, and a through hole 3 which is used to inject a sample and to discharge a vapor is made in the upper part of the circumferential wall. A recessed part 4 used to hold the sample is formed in a position corresponding to the through hole 3 at the lower part of the circumferential wall. In an atomic absorption analysis, a sample S is dropped into the furnace 1 through the through hole 3. The sample S is put into the recessed part 4 and held here. After that, the furnace 1 is arranged in an atomization part for an atomic absorption analytical apparatus, an electric current is supplied, the sample S is heated and vaporized, and an absorption analysis is performed. Thereby, the position with reference to the through hole 3 of the sample S becomes always definite, the time during which a vaporized atomic vapor exists inside the furnace 1 becomes definite, and the analytical sensitivity of the analytical apparatus is enhanced.
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公开(公告)号：JPH0226812A
公开(公告)日：1990-01-29
申请号：JP17408588
申请日：1988-07-12
Applicant: SHOWA ALUMINUM CORP
Inventor： YOSHIMOTO EIJI , HOTTA NORIYASU , KITAMURA TERUO , JOGAN SHIGETOSHI
IPC: C01B21/072
Abstract: PURPOSE:To attain 100 percentage of nitridation of Al at a relatively low temp. in a process for prepg. AlN powder by a floating direct nitridation process by proceeding the nitridation reaction in a reaction zone using a gaseous mixture consisting of gaseous N2 and gaseous NH3. CONSTITUTION:Al powder as raw material is charged to a vessel 1a for the Al powder, and floated with a stream of gaseous N2 of high purity (generally >=99.99% purity) introduced from an N2 gas feeding pipe 6. The floated Al powder is introduced into a reaction zone 3 (at >=1200 deg.C atmosphere temp.) of a reaction pipe 2. At the same time, gaseous NH3(pref. >=99.9% purity) is introduced from an NH3 gas feeding pipe 7 into the reaction zone 3, where the gaseous N2 is mixed with the gaseous NH3. The gaseous mixture (5-30, pref. 10-25vol.% NH3 concn.) nitrides the Al powder. Thus, 100 percentage of nitridation is attained even at
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公开(公告)号：JPH01308813A
公开(公告)日：1989-12-13
申请号：JP13891488
申请日：1988-06-06
Applicant: SHOWA ALUMINUM CORP
Inventor： HOTTA NORIYASU , YOSHIMOTO HARUSHIGE , TADA KIYOSHI , KITAMURA TERUO , JOGAN SHIGETOSHI
IPC: C01B21/072
Abstract: PURPOSE:To obtain high-purity AlN, by preheating N2 gas when Al powder is made to react in a N2 gas stream to enable the temperature in the reaction section to be reduced to suppress generation of decomposition gas from the construction material of the reaction tube. CONSTITUTION:N2 gas from its feed section A is preheated (to 200-400 deg.C) by a preheating means 11 and fed to a powder container 2 in an Al powder feed section C. Al powder in said container 3 is then made to float on a upward current of the N2 gas fed and supplied into a reaction tube 5. The Al powder thus fed, being heated through a heater 6 during passing through the reaction section in the reaction tube 5, is converted into AlN. The AlN powder thus produced is transferred, on a N2 gas stream, to a collection vessel 8, where it is separated from the N2 gas and deposited at the bottom. According this N2 gas preheating system, the nitrification will sufficiently proceed even at ca. 1,300-1,500 deg.C.
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