公开(公告)号：JPH1126595A

公开(公告)日：1999-01-29

申请号：JP11649898

申请日：1998-04-27

Applicant: IBM ,  SIEMENS AG

Inventor： LEVY MAX GERALD ,  FIEGL BERNHARD ,  GLASHAUSER WALTER ,  PREIN FRANK

IPC: H01L21/76 ,  H01L21/304 ,  H01L21/306 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To make shallow trench separation by a method wherein a conformal silicon oxide layer on a mesa is partially etched by selective RIE and then the silicon oxide layer is transformed to a flat silicon oxide layer using a silicon nitride pad as an etch stopper and then a conformal blanket silicon oxide layer is polished chemically and mechanically. SOLUTION: An RIE etchant is introduced from openings 48A, 48B, 48C into etching openings 50A, 50B, 50C formed inside through a gate insulating layer 44 extended through a tungsten silicide layer 42 and a doped polysilicon layer 40. Then, the surfaces of gate oxide layer segments 38/38' are exposed with a gate conductor stack 51 having source/drain windows on both sides of an N well 34 and having a dummy window wherein a P well is exposed for the later ion implantation being left over. After that, the entire surface is covered by the silicon nitride gate insulating layer 44 and then the insulating layer 44 is polished chemically and mechanically.

公开(公告)号：JPH10294362A

公开(公告)日：1998-11-04

申请号：JP9896898

申请日：1998-04-10

Applicant: IBM ,  SIEMENS AG

Inventor： FIEGL BERNHARD ,  GLASHAUSER WALTER ,  LEVY MAX G ,  NASTASI VICTOR R

IPC: H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To enable a process through which a shallow trench is filled in to be enhanced in manufacturing properties and yield by a method wherein an intermediate plane layer is formed, and the lower layer of a thick oxide is selectively etched to deteriorate in planarity. SOLUTION: An upper planar surface is formed so as to be flush with the fill-in upper surface 115 of a fill-in layer 110. A polish stop layer 130 is removed by the use of etching chemicals which are capable of etching both the polish stop layer 130 and a temporary fill-in layer 120, and an intermediate plane surface is kept unremoved leaving the cover part of the temporary fill-in layer 120 unremoved. A part of the fill-in layer 110 located outside the cover part of the temporary fill-in layer 120 is etched as deep as a point shallower than a trench by the use of chemicals which etch the fill-in layer 110 preferentially so as to enable the fill-in upper surface 115 of the fill-in layer 110 located above a reference surface to be flush with the fill-in upper surface 115 of the fill-in layer 110 located in the trench, whereby a planar surface is deteriorated in flatness.

公开(公告)号：DE3171170D1

公开(公告)日：1985-08-08

申请号：DE3171170

申请日：1981-02-17

Applicant: SIEMENS AG

Inventor： TISCHER PETER DR RER NAT ,  GLASHAUSER WALTER

IPC: C25D1/10 ,  A61K38/00 ,  B01D59/18 ,  C25D1/00 ,  G03F7/11 ,  G03F7/26 ,  G03F7/02

公开(公告)号：DE3006543A1

公开(公告)日：1981-08-27

申请号：DE3006543

申请日：1980-02-21

Applicant: SIEMENS AG

Inventor： TISCHER PETER DR RER NAT ,  GLASHAUSER WALTER

IPC: C25D1/10 ,  A61K38/00 ,  B01D59/18 ,  C25D1/00 ,  G03F7/11 ,  G03F7/26 ,  B05D3/06 ,  B44C1/20 ,  B44C1/22 ,  C25D1/02 ,  G03F7/00

公开(公告)号：DE3466088D1

公开(公告)日：1987-10-15

申请号：DE3466088

申请日：1984-10-16

Applicant: SIEMENS AG

Inventor： GLASHAUSER WALTER

IPC: G03F1/00 ,  G03F1/22 ,  H01L21/027

Abstract: A method for constructing an x-ray mask having a metal carrier foil supporting an x-ray absorbing structure on a metal frame characterized by providing a carrier plate coated with a nickel layer on which a carrier foil is deposited, then forming an electrodepositing mask on the carrier foil with portions of the carrier foil being exposed, electroplating gold onto the exposed portions and subsequently etching the carrier plate to form a window therein and then etching the exposed nickel layer to at least expose the surface of portions of the carrier foil.

公开(公告)号：AT29601T

公开(公告)日：1987-09-15

申请号：AT84112467

申请日：1984-10-16

Applicant: SIEMENS AG

Inventor： GLASHAUSER WALTER

IPC: G03F1/00 ,  G03F1/22 ,  H01L21/027

公开(公告)号：AU3464084A

公开(公告)日：1985-05-02

申请号：AU3464084

申请日：1984-10-24

Applicant: SIEMENS AG

Inventor： GLASHAUSER WALTER

IPC: G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  G03F7/02

Abstract: A method for constructing an x-ray mask having a metal carrier foil supporting an x-ray absorbing structure on a metal frame characterized by providing a carrier plate coated with a nickel layer on which a carrier foil is deposited, then forming an electrodepositing mask on the carrier foil with portions of the carrier foil being exposed, electroplating gold onto the exposed portions and subsequently etching the carrier plate to form a window therein and then etching the exposed nickel layer to at least expose the surface of portions of the carrier foil.

公开(公告)号：DE69802607D1

公开(公告)日：2002-01-10

申请号：DE69802607

申请日：1998-03-12

Applicant: SIEMENS AG ,  IBM

Inventor： FIEGL BERNHARD ,  GLASHAUSER WALTER ,  LEVY MAX G ,  NASTASI VICTOR R

IPC: H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/762

公开(公告)号：DE3039110A1

公开(公告)日：1982-05-13

申请号：DE3039110

申请日：1980-10-16

Applicant: SIEMENS AG

Inventor： GLASHAUSER WALTER ,  GHICA GRIGORE-VLAD DIPL ING

IPC: G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H03H3/08 ,  G03F7/26 ,  G03C1/68 ,  G03C5/24 ,  G03C5/16

Abstract: Stress and crack-free development of resist layers or films, for example composed of PMMA, used in production of galvanically generated flat precision parts is achieved. Resist layers having a thickness of at least 100 mu m are exposed via electron lithography or x-ray lithography techniques whereby very fine structure patterns having dimensions in the micron and sub-micron range are attained and developed with a developer comprised of a mixture of a material selected from the glycol ether group, a material selected from the primary amine group, a material selected from the aqueous group and a material selected from the azine group. Aspect ratios of 30:1 are achieved without dark errosion. Residual PMMA components remaining after development, as well as the developer itself, are fully removed with a post-development rinsing with water so that no disruptive layer residues remain on the surface which has been uncovered through development.

公开(公告)号：AU4583079A

公开(公告)日：1979-10-18

申请号：AU4583079

申请日：1979-04-09

Applicant: SIEMENS AG

Inventor： GLASHAUSER WALTER ,  MICHEL HANS-JURGEN

IPC: G01B11/14 ,  C23F1/00 ,  C25F3/02 ,  G01B11/28 ,  G01N21/88