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    Process for selective metallization of insulating material bodies
    1.
    发明授权
    Process for selective metallization of insulating material bodies 失效
    绝缘材料选择性金属化过程

    公开(公告)号：US3775117A

    公开(公告)日：1973-11-27

    申请号：US3775117D

    申请日：1971-07-13

    Applicant: SIEMENS AG

    Inventor： HOFFMAN H ,  ROSSHAUPTER E ,  WEITZE A

    IPC: G03C5/00

    CPC classification number: G03C5/00

    Abstract: Process for the production of fine-line circuit plates or the like having selected sharply defined metallized areas on an insulating base and the metallized plate so-produced. The process generally comprises applying a layer of a photoresist onto the insulating base and then applying a layer of a light and developer permeable, metallizing ink repellant material (i.e., a silicon oil in xylene) onto the photoresist layer. The coated base is then selectively exposed to light, rendering the exposed photoresist areas chemically changed in its solubility to a suitable developer. The exposed coated base is then contacted with the developer and the soluble photoresist areas are removed, along with the superimposed areas of repellant material supported thereby. The resultant base, having selected areas completely exposed and other areas covered with the non-exposed photoresist and repellant material, is then contacted with a metallizing ink (i.e., an aqueous solution of lithium polymolybdate) and the resultant areas of metallizing ink on the base are air dried. Next, the partially metallized base is annealed at temperatures sufficient to completely remove the remaining photoresist and repellant materials and burn-in the metal on the base.

    Abstract translation: 在绝缘基底上生产精细线路板等的方法，其中所选择的尖锐的金属化区域和如此制造的金属化板。 该方法通常包括将光致抗蚀剂层施加到绝缘基底上，然后在光致抗蚀剂层上施加一层轻的和显影剂可渗透的金属化的排墨材料（即在二甲苯中的硅油）。 然后将涂覆的碱基选择性地暴露于光，使曝光的光致抗蚀剂区域在其溶解度方面化学改变为合适的显影剂。 然后将暴露的涂覆的基底与显影剂接触，并且除去可溶性光致抗蚀剂区域以及由此支撑的排斥材料的叠加区域。 然后，将所选择的完全暴露的区域和未暴露的光致抗蚀剂和排斥材料覆盖的区域与金属化油墨（即，多钼酸锂的水溶液）接触，并将所得的金属化油墨区域与基底 风干。 接下来，部分金属化的基底在足以完全去除剩余的光致抗蚀剂和排斥材料并在基底上烧蚀金属的温度下退火。

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