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    THROUGH SUBSTRATE VIAS AND DEVICE
    1.
    发明申请
    THROUGH SUBSTRATE VIAS AND DEVICE 审中-公开

    公开(公告)号：WO2014070091A3

    公开(公告)日：2014-05-08

    申请号：PCT/SE2013/051273

    申请日：2013-10-31

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： ERLESAND, Ulf ,  KÄLVESTEN, Edvard ,  EBEFORS, Thorbjörn

    IPC: H01L21/768 ,  B81B1/00 ,  B81C1/00 ,  H01L21/48 ,  H01L23/48 ,  H01L23/538

    Abstract: The invention relates to a method of making through-substrate-vias in glass substrates. A first substrate (10) is provided on which a plurality of needles (11) protruding vertically from the substrate are made. A second substrate (14) made of glass is then provided. The substrates are located adjacent each other such that the needles on the first substrate face the second substrate. Heat is applied to a temperature where the glass softens, by heating the glass or the needle substrate or both. A force (F) is applied such that the needles on the first substrate penetrate into the glass to provide impressions in the glass. Finally, the first substrate is removed and material filling the impressions in the second substrate made of glass is provided. There is also provided a device, comprising a silicon substrate (100; 200). There is a cavity (102) in which a MEMS component (104) is accommodated, and a cap wafer (300) made of a material having a low dielectric constant, preferably glass. The cap wafer has through substrate vias of metal, and is bonded to the silicon substrate.

    A STARTING SUBSTRATE FOR SEMICONDUCTOR ENGINEERING HAVING SUBSTRATE-THROUGH CONNECTIONS AND A METHOD FOR MAKING SAME
    2.
    发明申请
    A STARTING SUBSTRATE FOR SEMICONDUCTOR ENGINEERING HAVING SUBSTRATE-THROUGH CONNECTIONS AND A METHOD FOR MAKING SAME 审中-公开
    具有基板贯通连接的半导体工程的启动基板及其制造方法

    公开(公告)号：WO2012144951A1

    公开(公告)日：2012-10-26

    申请号：PCT/SE2012/050420

    申请日：2012-04-19

    Applicant: SILEX Microsystems AB ,  ERLESAND, Ulf

    Inventor： ERLESAND, Ulf

    IPC: H01L21/768 ,  H01L23/498 ,  H01L27/12 ,  H01L29/78

    CPC classification number: B81B3/0086 ,  B81C1/00222 ,  H01L21/76898 ,  H01L23/481 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a substrate-through electrical connection (10) for connecting components on opposite sides of a substrate, and a method for making same. The connection comprises a substrate-through via made from substrate material (10). There is a trench (11) provided surrounding said via, the walls of said trench being coated with a layer of insulating material (12) and the trench (11) is filled with conductive or semi-conductive material (13). A doping region (15) for threshold voltage adjustment is provided in the via material in the surface of the inner trench wall between insulating material (12) and the material (10) in the via. There are contacts (17, 17) to the via on opposite sides of the substrate, and a contact (18) to the conductive material (13) in the trench (11) so as to enable the application of a voltage to the conductive material (13).

    Abstract translation: 本发明涉及一种用于连接衬底相对两侧的部件的基底通电连接件（10）及其制造方法。 该连接包括由基底材料（10）制成的基底通孔。 设置有围绕所述通孔的沟槽（11），所述沟槽的壁涂覆有绝缘材料层（12），并且沟槽（11）填充有导电或半导体材料（13）。 用于阈值电压调整的掺杂区域（15）设置在通孔材料中，在通孔中的绝缘材料（12）和材料（10）之间的内沟槽壁的表面中。 在衬底的相对侧上有通孔的触点（17,17）和与沟槽（11）中的导电材料（13）的触点（18），以便能够向导电材料施加电压 （13）。

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