公开(公告)号：AU1727295A

公开(公告)日：1995-08-15

申请号：AU1727295

申请日：1995-01-30

Applicant: SILICON VIDEO CORP

Inventor： SPINDT CHRISTOPHER J ,  CORCORAN PATRICK A

IPC: H01J29/04 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J29/08 ,  H01J29/62 ,  H01J31/12

Abstract: A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.