公开(公告)号：US20150311239A1

公开(公告)日：2015-10-29

申请号：US14649710

申请日：2013-11-15

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Jun Ho WON ,  Won Ho LEE ,  Do Young LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract translation: 本发明涉及一种CMOS图像传感器及其制造方法，该CMOS图像传感器包括具有增强的光谱特性的红外像素及其制造方法，其中在RGB像素的滤色器和红外像素的滤色器之间形成台阶部分。 根据各个像素，在滤色器和红外滤光器之间形成阶梯部分，并且无论滤色器和红外滤光器的形成中的材料的特性如何，都可任意调节滤光片的厚度，从而提高串扰特性。

公开(公告)号：US20160300875A1

公开(公告)日：2016-10-13

申请号：US15036480

申请日：2014-11-11

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Jun Ho WON ,  Do Young LEE

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/1469

Abstract: The present invention provides relates to a substrate separation-type three-dimensional chip stacking image sensor of which a noise characteristic is improved by separately implementing an image sensor circuit as a first semiconductor chip and a second semiconductor chip and physically separating substrate respectively forming the first semiconductor chip and the second semiconductor chip, and a method for manufacturing the same. The present invention has the advantage that even though a plurality of circuit blocks are formed on one semiconductor substrate, the substrate is physically separated such that the separated substrates independently operate.

Abstract translation: 本发明涉及通过分别实现作为第一半导体芯片的图像传感器电路和分别形成第一半导体芯片的第二半导体芯片和物理分离基板来提高噪声特性的基板分离型三维芯片堆叠图像传感器 半导体芯片和第二半导体芯片及其制造方法。 本发明的优点在于，即使在一个半导体衬底上形成多个电路块，基板被物理分离，使得分离的衬底独立地工作。

公开(公告)号：US20150325618A1

公开(公告)日：2015-11-12

申请号：US14442831

申请日：2013-04-24

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun AHN ,  Jun Ho WON

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present invention relates to a CMOS image sensor including a color microlens, in which the color characteristics of a microlens are improved by replacing a microlens made of a transparent material with a material having characteristics similar to those of a color filter, and a manufacturing method thereof. In accordance with the CMOS image sensor including a color microlens and the manufacturing method thereof according to the present invention, color characteristics is improved. Since formation processes of a color filter and a microlens are performed at one time, additional processes for planarization and step difference adjustment are not necessary, so that an entire process is simplified. In the progress of light, since there is no interface between materials, reflection, refraction and the like are reduced, so that it is possible to increase light efficiency.

Abstract translation: 本发明涉及一种包括彩色微透镜的CMOS图像传感器，其中通过用具有与滤色器相似的特性的材料代替由透明材料制成的微透镜来提高微透镜的颜色特性，以及制造方法 其中。 根据包括彩色微透镜的CMOS图像传感器及其根据本发明的制造方法，提高了颜色特性。 由于一次执行滤色器和微透镜的形成处理，因此不需要用于平坦化和阶梯差调整的附加处理，从而简化了整个处理。 在光的进行中，由于材料之间没有界面，反射，折射等减少，从而可以提高光效。