公开(公告)号：US20160163595A1

公开(公告)日：2016-06-09

申请号：US14888674

申请日：2014-04-30

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun AHN ,  Sang Wook AHN ,  Yong Woon LEE ,  Huy Chan JUNG ,  Do Young LEE

IPC: H01L21/768 ,  H01L21/683 ,  H01L21/306

CPC classification number: H01L21/76898 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7684 ,  H01L2221/68327 ,  H01L2221/68359

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract translation: 用于制造通孔硅通孔（TSV）的方法采用传统的沟槽绝缘工艺来容易地制造通孔硅通孔（TSV），从而实现通孔硅通孔（TSV）和通孔硅通孔（TSV）之间的有效电绝缘 硅。

公开(公告)号：US20150311239A1

公开(公告)日：2015-10-29

申请号：US14649710

申请日：2013-11-15

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Jun Ho WON ,  Won Ho LEE ,  Do Young LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract translation: 本发明涉及一种CMOS图像传感器及其制造方法，该CMOS图像传感器包括具有增强的光谱特性的红外像素及其制造方法，其中在RGB像素的滤色器和红外像素的滤色器之间形成台阶部分。 根据各个像素，在滤色器和红外滤光器之间形成阶梯部分，并且无论滤色器和红外滤光器的形成中的材料的特性如何，都可任意调节滤光片的厚度，从而提高串扰特性。

公开(公告)号：US20160300875A1

公开(公告)日：2016-10-13

申请号：US15036480

申请日：2014-11-11

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Jun Ho WON ,  Do Young LEE

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/1469

Abstract: The present invention provides relates to a substrate separation-type three-dimensional chip stacking image sensor of which a noise characteristic is improved by separately implementing an image sensor circuit as a first semiconductor chip and a second semiconductor chip and physically separating substrate respectively forming the first semiconductor chip and the second semiconductor chip, and a method for manufacturing the same. The present invention has the advantage that even though a plurality of circuit blocks are formed on one semiconductor substrate, the substrate is physically separated such that the separated substrates independently operate.

Abstract translation: 本发明涉及通过分别实现作为第一半导体芯片的图像传感器电路和分别形成第一半导体芯片的第二半导体芯片和物理分离基板来提高噪声特性的基板分离型三维芯片堆叠图像传感器 半导体芯片和第二半导体芯片及其制造方法。 本发明的优点在于，即使在一个半导体衬底上形成多个电路块，基板被物理分离，使得分离的衬底独立地工作。

公开(公告)号：US20160133603A1

公开(公告)日：2016-05-12

申请号：US14891635

申请日：2014-05-12

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Sang Wook AHN ,  Huy Chan JUNG ,  Yong Woon LEE ,  Do Young LEE

IPC: H01L25/065 ,  G11C7/10 ,  G11C7/06 ,  G11C5/06 ,  H01L23/528

CPC classification number: H01L25/0657 ,  G11C5/063 ,  G11C7/06 ,  G11C7/10 ,  G11C2207/005 ,  H01L23/49816 ,  H01L23/528 ,  H01L25/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract translation: 通过堆叠多个基板形成半导体存储器，并且通过数据转储线连接每个基板上的存储单元。 交换机可以介入存储器单元和数据转储线之间。 当每个基板的数据被数据转储线转储时，由于寄生成分引起的速度下降和功耗增加的问题可以被最小化。 此外，包括存储单元的核心电路可以设置在一个基板上，并且外围电路单元可以设置在剩余的基板上。