公开(公告)号：CA2584564A1

公开(公告)日：2006-04-27

申请号：CA2584564

申请日：2005-10-19

Applicant: SIOPTICAL INC

Inventor： SHASTRI KALPENDU ,  PIEDE DAVID ,  GOTHOSKAR PRAKASH ,  MONTGOMERY ROBERT ,  PATEL VIPULKUMAR ,  NADEAU MARY

IPC: G11B7/00

Abstract: An improvement in the reliability and lifetime of SOI-based opto-electronic systems is provided through the use of a monolithic opto-electronic feedback arrangement that monitors one or more optical signals within the opto-electronic system and provides an electrical feedback signal to adjust the operation parameters of selected optical devices. For example, input signal coupling orientation may be controlled. Alternatively, the operation of an optical modulator, switch, filter, or attenuator may be under closed-loop feedback control by virtue of the inventive monolithic feedback arrangement. The feedback arrangement may also include a calibration/look-up table, coupled to the control electronics, to provide the baseline signals used to analyze the system's performance.

公开(公告)号：AT468610T

公开(公告)日：2010-06-15

申请号：AT04811306

申请日：2004-11-17

Applicant: SIOPTICAL INC ,  PATEL VIPULKUMAR ,  GHIRON MARGARET ,  GOTHOSKAR PRAKASH ,  MONTGOMERY ROBERT KEITH ,  PATHAK SOHAM ,  PIEDE DAVID ,  SHASTRI KALPENDU ,  YANUSHEFSKI KATHERINE A

Inventor： PATEL VIPULKUMAR ,  GHIRON MARGARET ,  GOTHOSKAR PRAKASH ,  MONTGOMERY ROBERT ,  PATHAK SOHAM ,  PIEDE DAVID ,  SHASTRI KALPENDU ,  YANUSHEFSKI KATHERINE

IPC: H01L27/14 ,  G02B6/12 ,  G02B6/122 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0392 ,  H01L31/06 ,  H01L31/108 ,  H01L31/153

Abstract: A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.

公开(公告)号：WO2006044887A3

公开(公告)日：2009-04-09

申请号：PCT/US2005037422

申请日：2005-10-19

Applicant: SIOPTICAL INC ,  PIEDE DAVID ,  SHASTRI KALPENDU ,  MONTGOMERY ROBERT ,  GOTHOSKAR PRAKASH ,  PATEL VIPULKUMAR ,  NADEAU MARY

Inventor： PIEDE DAVID ,  SHASTRI KALPENDU ,  MONTGOMERY ROBERT ,  GOTHOSKAR PRAKASH ,  PATEL VIPULKUMAR ,  NADEAU MARY

IPC: G02B6/12 ,  G02B6/10

CPC classification number: G02F1/025 ,  G02B6/3586 ,  G02B6/3588 ,  G02B6/3594 ,  G02F1/0123 ,  G02F2201/58 ,  G02F2203/21

Abstract: An improvement in the reliability and lifetime of SOI-based opto-electronic systems is provided through the use of a monolithic opto-electronic feedback arrangement that monitors one or more optical signals within the opto-electronic system and provides an electrical feedback signal to adjust the operation parameters of selected optical devices. For example, input signal coupling orientation may be controlled. Alternatively, the operation of an optical modulator, switch, filter, or attenuator may be under closed-loop feedback control by virtue of the inventive monolithic feedback arrangement. The feedback arrangement may also include a calibration/look-up table, coupled to the control electronics, to provide the baseline signals used to analyze the system's performance.

Abstract translation: 通过使用单片光电反馈装置来提供基​​于SOI的光电系统的可靠性和寿命的改进，该装置监测光电系统内的一个或多个光信号，并提供电反馈信号以调整 所选光器件的运行参数。 例如，可以控制输入信号耦合取向。 或者，光学调制器，开关，滤波器或衰减器的操作可以通过本发明的单片反馈装置进行闭环反馈控制。 反馈布置还可以包括耦合到控制电子器件的校准/查找表，以提供用于分析系统性能的基线信号。