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    OPTICAL CROSSOVER IN THIN SILICON
    2.
    发明专利
    OPTICAL CROSSOVER IN THIN SILICON 未知

    公开(公告)号：CA2560845A1

    公开(公告)日：2005-10-13

    申请号：CA2560845

    申请日：2005-03-24

    Applicant: SIOPTICAL INC

    Inventor： GHIRON MARGARET ,  PIEDE DAVID ,  MONTGOMERY ROBERT KEITH ,  PATEL VIPULKUMAR ,  GOTHOSKAR PRAKASH ,  PATHAK SOHAM ,  YANUSHEFSKI KATHERINE A ,  SHASTRI KALPENDU

    IPC: G02B6/125 ,  G02B6/12

    Abstract: An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure tha t is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.

    WAFER-LEVEL OPTO-ELECTRONIC TESTING APPARATUS AND METHOD
    3.
    发明专利
    WAFER-LEVEL OPTO-ELECTRONIC TESTING APPARATUS AND METHOD 未知

    公开(公告)号：CA2558483A1

    公开(公告)日：2005-09-22

    申请号：CA2558483

    申请日：2005-03-08

    Applicant: SIOPTICAL INC

    Inventor： GOTHOSKAR PRAKASH ,  PATHAK SOHAM ,  PIEDE DAVID ,  YANUSHEFSKI KATHERINE A ,  GHIRON MARGARET ,  PATEL VIPULKUMAR ,  SHASTRI KALPENDU ,  MONTGOMERY ROBERT KEITH

    IPC: G01R31/26

    Abstract: A wafer-level testing arrangement for opto-electronic devices formed in a silicon-on-insulator (SOI) wafer structure utilizes a single opto-electronic testing element to perform both optical and electrical testing. Beam steering optics may be formed on the testing element and used to facilitate the coupling between optical probe signals and optical coupling elements (e.g., prism couplers, gratings) formed on the top surface of the SOI structure. The optical test signals are thereafter directed into optical waveguides formed in the top layer of the SOI structure. The opto-electronic testing element also comprises a plurality of electrical test pins that are positioned to contact a plurality of bondpad test sites on the opto-electronic device and perform electrical testing operations. The optical test signal results may be converted into electrical representations within the SOI structure and thus returned to the testing element as electrical signals.

    LIDAR SYSTEM UTILIZING SOI-BASED OPTO-ELECTRONIC COMPOUNDS
    4.
    发明专利
    LIDAR SYSTEM UTILIZING SOI-BASED OPTO-ELECTRONIC COMPOUNDS 未知

    公开(公告)号：CA2640303A1

    公开(公告)日：2008-04-17

    申请号：CA2640303

    申请日：2007-01-25

    Applicant: SIOPTICAL INC

    Inventor： ALBUQUERQUE VIJAY ,  PIEDE DAVID

    IPC: G01P3/36

    Abstract: A compact, integrated LIDAR system utilizes SOI-based optoelectronic components to provide for lower cost and higher reliability as compared to current LIDAR systems Preferably, an SOI-based LIDAR transmitter and an SOI- based LIDAR receiver (both optical components and electrical components) are integrated within a single module The various optical and electrical components are formed utilizing portions of the SO1 layer and applying well- known CMOS fabrication processes, including the formation of additional layer(s) over the SO1 layer to provide the required devices A laser source itself is attached to the SO1 arrangement and coupled through an integrated modulation device to provide the scanning laser output signal The return, reflected optical signal is received by a photodetector integrated within th e SO1 arrangement, where it is thereafter converted into an electrical signal and subjected to various types of signal processing to perform the desired type(s) of signal characterization/signature analysis.

    OPTICAL CROSSOVER IN THIN SILICON
    5.
    发明专利
    OPTICAL CROSSOVER IN THIN SILICON 未知

    公开(公告)号：CA2560845C

    公开(公告)日：2011-05-24

    申请号：CA2560845

    申请日：2005-03-24

    Applicant: SIOPTICAL INC

    Inventor： PIEDE DAVID ,  GOTHOSKAR PRAKASH ,  GHIRON MARGARET ,  MONTGOMERY ROBERT KEITH ,  PATEL VIPULKUMAR ,  PATHAK SOHAM ,  SHASTRI KALPENDU ,  YANUSHEFSKI KATHERINE A

    IPC: G02B6/125 ,  G02B6/12

    Abstract: An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.

    WAFER-LEVEL OPTO-ELECTRONIC TESTING APPARATUS AND METHOD
    7.
    发明专利
    WAFER-LEVEL OPTO-ELECTRONIC TESTING APPARATUS AND METHOD 未知

    公开(公告)号：CA2558483C

    公开(公告)日：2015-01-06

    申请号：CA2558483

    申请日：2005-03-08

    Applicant: SIOPTICAL INC

    Inventor： GOTHOSKAR PRAKASH ,  GHIRON MARGARET ,  MONTGOMERY ROBERT KEITH ,  PATEL VIPULKUMAR ,  SHASTRI KALPENDU ,  PATHAK SOHAM ,  PIEDE DAVID ,  YANUSHEFSKI KATHERINE A

    IPC: G01R31/28 ,  G01R31/26

    Abstract: A wafer-level testing arrangement for opto-electronic devices formed in a silicon-on-insulator (SOI) wafer structure utilizes a single opto-electronic testing element to perform both optical and electrical testing. Beam steering optics may be formed on the testing element and used to facilitate the coupling between optical probe signals and optical coupling elements (e.g., prism couplers, gratings) formed on the top surface of the SOI structure. The optical test signals are thereafter directed into optical waveguides formed in the top layer of the SOI structure. The opto~electronic testing element also comprises a plurality of electrical test pins that are positioned to contact a plurality of bondpad test sites on the opto-electronic device and perform electrical testing operations. The optical test signal results may be converted into electrical representations within the SOI structure and thus returned to the testing element as electrical signals.

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