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    III-V CHIP PREPARATION AND INTEGRATION IN SILICON PHOTONICS
    1.
    发明申请
    III-V CHIP PREPARATION AND INTEGRATION IN SILICON PHOTONICS 审中-公开
    硅光子III-V芯片的制备和集成

    公开(公告)号：WO2017197132A1

    公开(公告)日：2017-11-16

    申请号：PCT/US2017/032189

    申请日：2017-05-11

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： LAMBERT, Damien

    IPC: H01S5/02

    Abstract: A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

    Abstract translation: 通过将III-V晶片固定到转印晶片来制造复合半导体激光器。 去除III-V晶片的衬底，并且将III-V晶片蚀刻成多个芯片，同时将III-V晶片固定到转移晶片。 转移晶片被分离。 转移晶片的一部分用作将芯片接合在硅器件的凹槽中的手柄。 该芯片被用作半导体激光器的增益介质。

    METHOD AND SYSTEM FOR WIDELY TUNABLE LASER
    2.
    发明申请
    METHOD AND SYSTEM FOR WIDELY TUNABLE LASER 审中-公开
    用于广泛可调激光器的方法和系统

    公开(公告)号：WO2017066044A1

    公开(公告)日：2017-04-20

    申请号：PCT/US2016/055329

    申请日：2016-10-04

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： LI, Guoliang ,  KRASULICK, Stephen, B. ,  LAMBERT, Damien

    IPC: H01S3/00 ,  H01S3/094 ,  H01S3/067

    CPC classification number: H01S5/068 ,  H01S5/021 ,  H01S5/02284 ,  H01S5/0268 ,  H01S5/4012 ,  H01S5/4087

    Abstract: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.

    Abstract translation: 一种可广泛调谐的激光系统包括衬底，第一和第二激光器，输出和至少一个光学组合装置。 第一激光器与衬底集成，包括增益介质，该增益介质包括第一材料，并发射可在至少部分由第一材料确定的第一波长范围内可调的波长的光。 第二激光器与衬底集成，包括增益介质，该增益介质包括第二材料，并发射波长可调的第二波长范围内的光，该第二波长范围与第一波长范围不同，该第二波长范围至少部分由 第二种材料。 该至少一个光学组合装置被配置为将来自第一激光器和第二激光器中的一个或两个的光引导至输出。

    STEPPED OPTICAL BRIDGE FOR CONNECTING SEMICONDUCTOR WAVEGUIDES
    3.
    发明申请
    STEPPED OPTICAL BRIDGE FOR CONNECTING SEMICONDUCTOR WAVEGUIDES 审中-公开
    用于连接半导体波导的阶梯式光学桥

    公开(公告)号：WO2017139350A1

    公开(公告)日：2017-08-17

    申请号：PCT/US2017/016968

    申请日：2017-02-08

    Applicant: SKORPIOS TECHNOLOGIES, INC

    Inventor： LAMBERT, Damien

    IPC: G02B6/13

    CPC classification number: G02B6/12002 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/12147 ,  H01S5/0202 ,  H01S5/021 ,  H01S5/02252 ,  H01S5/026 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/343 ,  H01S5/4025 ,  H01S5/4087 ,  H04B10/505 ,  H04J14/02

    Abstract: A photonic device includes a semiconductor wafer having a waveguide formed therein. An end of the waveguide includes a step. The photonic device further includes a semiconductor chip bonded to the semiconductor wafer and having an active region, and a waveguide coupler disposed in a gap between a sidewall of the semiconductor chip and the end of the waveguide. The waveguide coupler includes an optical bridge that has a first end and a second end opposing the first end. The first end of the optical bridge is interfaced with a facet of the active region of the semiconductor chip. The second end of the optical bridge is interfaced with the end of waveguide, and has a portion thereof disposed over the step at the end of the waveguide.

    Abstract translation: 光子器件包括其中形成有波导的半导体晶片。 波导的一端包括一个台阶。 光子器件还包括结合到半导体晶片并具有有源区的半导体芯片以及设置在半导体芯片的侧壁和波导的端部之间的间隙中的波导耦合器。 波导耦合器包括具有第一端和与第一端相对的第二端的光桥。 光桥的第一端与半导体芯片的有源区的面相接。 光桥的第二端与波导的端部连接，并且其一部分设置在波导端部的台阶上。

    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE
    8.
    发明申请
    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE 审中-公开

    公开(公告)号：WO2020106974A1

    公开(公告)日：2020-05-28

    申请号：PCT/US2019/062642

    申请日：2019-11-21

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： APIRATIKUL, Paveen ,  LAMBERT, Damien

    IPC: H01L29/66 ,  H01L29/04 ,  H01L29/12 ,  H01L33/04

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    VERTICAL OUTPUT COUPLERS FOR PHOTONIC DEVICES
    10.
    发明申请
    VERTICAL OUTPUT COUPLERS FOR PHOTONIC DEVICES 审中-公开
    用于光电器件的垂直输出耦合器

    公开(公告)号：WO2016172202A1

    公开(公告)日：2016-10-27

    申请号：PCT/US2016/028431

    申请日：2016-04-20

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： LAMBERT, Damien

    IPC: G02B6/14 ,  G02B6/122 ,  G02B6/136

    CPC classification number: G02B6/125 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12169

    Abstract: A method forms a vertical output coupler for a waveguide that propagates light along a horizontal propagation direction, through a waveguide material that overlies a buried oxide layer. The method includes etching the waveguide to remove a portion of the waveguide. The etching forms at least a first plane that is at an edge of the waveguide, is adjacent to the removed portion of the waveguide, and is tilted at a vertical angle between 20 degrees and 70 degrees with respect to the propagation direction. The method further includes coating the first tilted plane with a reflective metal to form a mirror, such that the mirror reflects the light into a direction having a vertical component.

    Abstract translation: 一种方法形成用于通过覆盖掩埋氧化物层的波导材料沿着水平传播方向传播光的波导的垂直输出耦合器。 该方法包括蚀刻波导以去除波导的一部分。 蚀刻形成在波导的边缘处的至少第一平面，与波导的去除部分相邻，并相对于传播方向以20度和70度之间的垂直角度倾斜。 该方法还包括用反射金属涂覆第一倾斜平面以形成反射镜，使得反射镜将光反射成具有垂直分量的方向。

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