公开(公告)号：EP2648205A2

公开(公告)日：2013-10-09

申请号：EP11845718.3

申请日：2011-11-29

Applicant: SN Display Co., Ltd.

Inventor： LEE, Choonrae ,  KIM, Hakwoong

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/18 ,  B82Y99/00 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J9/148 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2329/0455 ,  H01J2329/46 ,  Y10S977/952

Abstract: A field emission display (FED) and a fabrication method thereof are disclosed. A lower plate of the FED includes: a cathode electrode formed on the substrate; a diffusion blocking layer formed on the cathode electrode; a seed metal layer formed on the diffusion blocking layer; carbon nano-tubes (CNTs) grown as single crystals from the grains of the seed metal layer; a gate insulating layer formed on the substrate on which the cathode electrode, the diffusion blocking layer, and the seed metal layer are formed, in order to cover the CNTs; and a gate electrode formed on the gate insulating layer.

Abstract translation: 公开了场发射显示器（FED）及其制造方法。 FED的下板包括：形成在基板上的阴极; 形成在阴极上的扩散阻挡层; 形成在扩散阻挡层上的种子金属层; 从种子金属层的晶粒生长为单晶的碳纳米管（CNT）; 形成在其上形成有阴极电极，扩散阻挡层和种子金属层的基板上以覆盖CNT的栅极绝缘层; 以及形成在栅极绝缘层上的栅电极。