公开(公告)号：EP0103645A4

公开(公告)日：1986-09-22

申请号：EP83900804

申请日：1983-03-05

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  FUKUZAWA MANAMI ,  OHTSU TAKAJI

IPC: H03K19/094 ,  G11C19/00 ,  G11C19/28 ,  H03K5/02 ,  H03K5/135 ,  H03K5/153 ,  H03K5/26 ,  H03K19/096 ,  H03K5/01 ,  H03K5/15

CPC classification number: H03K19/096 ,  H03K5/135 ,  H03K5/153 ,  H03K5/26

公开(公告)号：JPS58151719A

公开(公告)日：1983-09-09

申请号：JP3476582

申请日：1982-03-05

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  FUKUZAWA MANAMI ,  OOTSU KOUJI

IPC: H03K19/094 ,  G11C19/00 ,  G11C19/28 ,  H03K5/02 ,  H03K5/135 ,  H03K5/153 ,  H03K5/26 ,  H03K19/096

Abstract: PURPOSE:To produce accurately a driving pulse voltage signal of a comparatively large amplitude with a low level of power consumption, by making use of a boosting function of a capacity element. CONSTITUTION:When an input signal v1 falls at a level L at a time point t1, both FET33 and 6 are turned off and the voltage v0 of an output terminal 11 rises up. Accordingly, the voltage rises up also at a point P. Then the voltage VP of a contact P rises up a voltage level H2 approximately double as high as the power supply voltage at a time point t1'. Therefore the source voltage of an FET7 is turned quickly to the power supply voltage Vd, and the voltage of the terminal 11 is set at Vd. An input signal v2 rises up to a high level H' at a time point t2, and FET4 and 8 are turned on. As a result, the voltage VP falls to a low level L and the voltage V0 is set at a low level L at a time point t2'. Thus the pulse voltage Q is obtained at the terminal 11 as shown by D.

公开(公告)号：JPS60106211A

公开(公告)日：1985-06-11

申请号：JP21486683

申请日：1983-11-15

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  MAEKAWA TOSHIICHI ,  FUKUZAWA MANAMI

IPC: H03F3/345 ,  H03F3/16 ,  H03F3/34

Abstract: PURPOSE:To compensate the short channel effect of an MOS transistor (TR) by connecting the drain of a TR part with a large threshold value with the source of a TR part with a small threshold value, and connecting the gates of the TR parts in common. CONSTITUTION:An enhancement MOSTR11 and a depletion type MOSTR21 are connected in series to constitute a composite TR. Then a current is flowed from the TR21 to the TR11. This composite TR device corresponds to the short channel effect of the enhancement type or depletion type MOSTR. Consequently, the evil influence of a decrease in gain, variance in linearity and current ratio, etc., upon channel length modulation is all removed.