BLOCH LINE MEMORY
    1.
    发明专利

    公开(公告)号:JPH0547171A

    公开(公告)日:1993-02-26

    申请号:JP20191491

    申请日:1991-08-12

    Applicant: SONY CORP

    Abstract: PURPOSE:To provide the memory which allows the formation of both magnetic films on the same element and can be easily produced by constituting intra- surface magnetized film patterns and perpendicularly magnetized film patterns by varying the coercive forces thereof. CONSTITUTION:Plural striped magnetic domains 16 are parallel formed on a magnetic thin film 2 having perpendicular magnetic anisotropy and the perpendicular Bloch lines formed on the magnetic walls of such striped magnetic domains 16 are determined as a memory information unit. Guide magnetic domains 17 are formed on one end side in the extension direction of the striped magnetic domains 16. The striped magnetic domains 16 and the guide magnetic domains 17 are stabilized by the perpendicularly magnetized film patterns 7 laminated on the magnetic thin film 2. The recording bit positions on the striped magnetic domains 16 are stabilized by the intra-surface magnetized film patterns 4. The coercive forces of the intra-surface magnetized film patterns 4 and the perpendicularly magnetized film pattern 7 are varied. Both the magnetized films are stably magnetized in this way.

    BLOCH LINE MEMORY
    2.
    发明专利

    公开(公告)号:JPH0547170A

    公开(公告)日:1993-02-26

    申请号:JP20191391

    申请日:1991-08-12

    Applicant: SONY CORP

    Abstract: PURPOSE:To provide the Bloch line memory which can smoothly execute bit transfer, the expansion and contraction of striped magnetic domains, etc., by adequately generating an anti-magnetorestriction effect of a Cr film. CONSTITUTION:The plural striped magnetic domains are parallel formed on a magnetic thin film 2 having perpendicular magnetic anisotropy and the Bloch line memory which has the perpendicular Bloch lines formed on the magnetic walls of such striped magnetic domains as a storage information unit is provided. A bit position setting layer 4 consisting of Cr having >=500Angstrom and =500Angstrom and

    MAGNETIC STORAGE ELEMENT
    3.
    发明专利

    公开(公告)号:JPH04141882A

    公开(公告)日:1992-05-15

    申请号:JP26461090

    申请日:1990-10-02

    Applicant: SONY CORP

    Abstract: PURPOSE:To securely control the expansion/contraction of stripe magnetic domains by stabilizing the stripe magnetic domains and guide stripe magnetic domains by means of vertical magnetized film patterns laminated on a magnetic thin film. CONSTITUTION:The guide stripe magnetic domains 2 restrict the expansion of the stripe magnetic domains 1 which are arranged in parallel in one direction. The expansion of the stripe magnetic domains in one direction is guided by magnetic field potential between the guide stripe magnetic domains provided on the side of one end of the adjacent stripe magnetic domain and it is restricted to the prescribed direction. The stripe magnetic domains 1 and the guide stripe magnetic domains 2 are stabilized by the floating magnetic fields of the vertical magnetized film patterns 4, 5 and 6 and the shapes of the guide stripe magnetic domains are held as they are without being cut by a local magnetic field for cut at the time of reading and writing. Thus, the expanding direction of the stripe magnetic domains can securely be controlled by the guide stripe magnetic domains.

    ANTIREFLECTION COATING
    4.
    发明专利

    公开(公告)号:JPH08304602A

    公开(公告)日:1996-11-22

    申请号:JP11437495

    申请日:1995-05-12

    Applicant: SONY CORP

    Abstract: PURPOSE: To obtain an antireflection coating having high conductivity which enables fast mass production at a low cost. CONSTITUTION: An antireflection coating 10 formed on a PET film 13 as a base body is obtd. by forming four layers to satisfy the following conditions relating to a wavelength λ0 in the wavelength region of light that the material of the antireflection coating 10 hardly absorbs. The first layer 1 has a refractive index smaller than the refractive index of the PET film 13 and has about 0.5λ0 optical thickness. The second layer 2 has a refractive index smaller than the refractive index of the third layer 3 and has an optical thickness larger than about 0.25λ0 . The third layer 3 has a refractive index larger than about 2.2 and has an optical thickness smaller than about 0.25λ0 . The fourth layer 4 has a refractive index smaller than the refractive index of the PET film 13 and has about 0.25λ0 optical thickness.

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