公开(公告)号：CA1270555A

公开(公告)日：1990-06-19

申请号：CA532333

申请日：1987-03-18

Applicant: SONY CORP

Inventor： HAMASAKI MASAHARU ,  ISHIKAWA KIKUE ,  KAGAWA YOSHIAKI ,  SUZUKI TOMOYUKI ,  YONEMOTO KAZUYA

IPC: H01L27/148 ,  H01L21/76 ,  H01L27/14 ,  H04N5/335 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N3/15

Abstract: A solid state image pick up device includes means for cancelling difference of impedance between photo-sensing areas in a photo-sensitive array. The impedance difference cancelling means cancels or makes the difference of impedance at every photo-sensing areas ignorable to unify the handling charge in respective photo-sensing areas. In practice, the impedance difference cancelling means provides a resistance high enough to make the impedance difference between respective photo-sensing areas ignorable.

公开(公告)号：FR2590076A1

公开(公告)日：1987-05-15

申请号：FR8615695

申请日：1986-11-12

Applicant: SONY CORP

Inventor： KATO YASABURO ,  SUZUKI TOSHIHIKO ,  ISAWA NOBUYUKI ,  KANBE HIDEO ,  HAMASAKI MASAHARU

IPC: C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18 ,  H01J29/39

Abstract: A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity rho s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity rho s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity rho o is then ten or more times higher (100 ohm-cm. or more) than that rho s obtained following neutron irradiation. For instance, if rho s is to be 40 to 50 ohm-cm., rho o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of rho s=10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

公开(公告)号：IT8622292D0

公开(公告)日：1986-11-11

申请号：IT2229286

申请日：1986-11-11

Applicant: SONY CORP

Inventor： KATO YASABURO ,  SUZUKI TOSHINIKI ,  ISAWA NOBUYUKI ,  KANBE HIDEO ,  HAMASAKI MASAHARU

IPC: C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18 ,  H01L

Abstract: A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity rho s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity rho s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity rho o is then ten or more times higher (100 ohm-cm. or more) than that rho s obtained following neutron irradiation. For instance, if rho s is to be 40 to 50 ohm-cm., rho o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of rho s=10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

公开(公告)号：GB2103876A

公开(公告)日：1983-02-23

申请号：GB8220305

申请日：1982-07-13

Applicant: SONY CORP

Inventor： TAKESHITA KANEYOSHI ,  HAMASAKI MASAHARU

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H01L31/00

Abstract: A solid state image sensor of the interline transfer type comprises a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, for example, P - type, a horizontal charge transfer portion and an output portion, wherein a semiconductor layer of a second conductive type, for example, N - type with the low impurity density is provided on the semiconductor substrate and a plurality of P - type semiconductor regions with the high impurity density, each of which contains a vertical charge transfer portion for vertically transferring a signal charge therein and an overflow drain for draining off a superfluous charge, both of which are provided in the form of N - type semiconductor areas apart from each other, and a plurality of photo-sensing areas for storing the signal charge produced in response to the light from the outside formed between each adjacent two of the P - type semiconductor regions are provided on the semiconductor layer of the N - type, so that no needless charge flows into the vertical charge transfer portion to be undesirably transferred therein.

公开(公告)号：DE3227826A1

公开(公告)日：1983-02-10

申请号：DE3227826

申请日：1982-07-26

Applicant: SONY CORP

Inventor： TAKESHITA KANEYOSHI ,  HAMASAKI MASAHARU

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H01L27/14 ,  H04N3/15

Abstract: A solid state image sensor of the interline transfer type comprises a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, for example, P - type, a horizontal charge transfer portion and an output portion, wherein a semiconductor layer of a second conductive type, for example, N - type with the low impurity density is provided on the semiconductor substrate and a plurality of P - type semiconductor regions with the high impurity density, each of which contains a vertical charge transfer portion for vertically transferring a signal charge therein and an overflow drain for draining off a superfluous charge, both of which are provided in the form of N - type semiconductor areas apart from each other, and a plurality of photo-sensing areas for storing the signal charge produced in response to the light from the outside formed between each adjacent two of the P - type semiconductor regions are provided on the semiconductor layer of the N - type, so that no needless charge flows into the vertical charge transfer portion to be undesirably transferred therein.

公开(公告)号：FR2510308A1

公开(公告)日：1983-01-28

申请号：FR8213127

申请日：1982-07-27

Applicant: SONY CORP

Inventor： TAKESHITA KANEYOSHI ,  HAMASAKI MASAHARU

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H01L27/14 ,  H01L31/06 ,  H04N3/14

Abstract: A solid state image sensor of the interline transfer type comprises a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, for example, P - type, a horizontal charge transfer portion and an output portion, wherein a semiconductor layer of a second conductive type, for example, N - type with the low impurity density is provided on the semiconductor substrate and a plurality of P - type semiconductor regions with the high impurity density, each of which contains a vertical charge transfer portion for vertically transferring a signal charge therein and an overflow drain for draining off a superfluous charge, both of which are provided in the form of N - type semiconductor areas apart from each other, and a plurality of photo-sensing areas for storing the signal charge produced in response to the light from the outside formed between each adjacent two of the P - type semiconductor regions are provided on the semiconductor layer of the N - type, so that no needless charge flows into the vertical charge transfer portion to be undesirably transferred therein.

公开(公告)号：DE69307947T2

公开(公告)日：1997-05-22

申请号：DE69307947

申请日：1993-04-30

Applicant: SONY CORP

Inventor： HAMASAKI MASAHARU

IPC: H04N5/335 ,  H04N5/353 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H04N3/15

Abstract: A solid state imaging device includes an image sensor having a two-dimensional matrix of picture elements. A first vertical scanning circuit provides a first vertical scanning signal, while a second vertical scanning circuit provides second and third vertical scanning signals. A switching circuit is coupled with horizonal lines of picture elements in the image sensor on one vertical side of the two-dimensional matrix and serves to switch either the first vertical scanning signal from the first vertical scanning circuit to the horizontal lines of picture elements, or in the alternative, the second and third vertical scanning signals from the second vertical scanning circuit thereto. When selected by the switching circuit, the first vertical scanning signal reads the picture elements in a respective horizontal line and a horizontal scanning circuit scans the picture elements in the selected horizontal line to read image signals from these picture elements. The second vertical scanning signal, when selected by the switching circuit, serves to reset the picture elements of the line which has been read, while the third vertical scanning signal serves to reset the picture elements in a different selected horizontal line.

公开(公告)号：DE69010533T2

公开(公告)日：1995-02-23

申请号：DE69010533

申请日：1990-03-30

Applicant: SONY CORP

Inventor： NARABU TADAKUNI ,  HAMASAKI MASAHARU ,  IIZUKA TETSUYA

IPC: H01L29/762 ,  G11C19/28 ,  H01L21/339 ,  H01L27/148 ,  H01L29/768 ,  H01L29/765

Abstract: An output circuit for CCD imager divices or CCD delay devices is disclosed in which a depletion type second MIS transistor (2) is connected to the drain side of a first MIS transistor (1) constituting a source follower adapted for convering transferred signal signals into an electrical voltage, and an output voltage (Vout) is supplied to the gate of the second MIS transitor (2). This depletion type second MIS transistor (2) causes the drain potential of the first MIS transistor (1) to be changed in phase with the input electrical charges to reduce the gate-to-drain capacitance of the first MIS transistor (1) to improve the charge-to-voltage conversion gain.

公开(公告)号：GB2222909B

公开(公告)日：1992-09-09

申请号：GB8920925

申请日：1989-09-15

Applicant: SONY CORP

Inventor： HAMASAKI MASAHARU

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/353 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

Abstract: The present invention is concerned with a solid state imaging device wherein a pulse voltage is applied to a semiconductor substrate to carry out an electronic shuttering operation in a blanking period. An output circuit comprising a MIS transistor formed in a well region on the semiconductor substrate. The impurity concentration and the junction depth of the well region are set so that a time constant determined by parasitic capacitances and resistances of the well region becomes shorter than the period which elapses since the application of the pulse voltage until the expiration of the blanking period, to suppress fluctuations in the level or gain of the MIS transistor due to the pulse voltage to prevent adverse effects on the output signals.

公开(公告)号：GB2220300B

公开(公告)日：1990-04-18

申请号：GB8917103

申请日：1989-07-26

Applicant: SONY CORP

Inventor： KATO YASABURO ,  SUZUKI TOSHIHIKO ,  ISAWA NOBUYUKI ,  KANBE HIDEO ,  HAMASAKI MASAHARU

IPC: C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

Abstract: A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity rho s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity rho s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity rho o is then ten or more times higher (100 ohm-cm. or more) than that rho s obtained following neutron irradiation. For instance, if rho s is to be 40 to 50 ohm-cm., rho o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of rho s=10 to 100 ohm-cm., or of 40 to 50 ohm-cm.