公开(公告)号：JPH0964172A

公开(公告)日：1997-03-07

申请号：JP20983195

申请日：1995-08-18

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  MORIYAMA ICHIRO ,  HAYASHIDA SEIJI ,  HASEGAWA TOSHIAKI

IPC: H01L23/522 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To eliminate insulator capacity formed at a portion exceeding upper and lower ends of each conductor between the conductors and hence reduce capacity between the conductors by providing a cavity exceeding the upper and lower ends of each conductor between the conductors. SOLUTION: A plurality of conductors 12, 13 becoming a second layer are formed on a first interlayer insulating film 11 becoming a first insulating film. A second interlayer insulating film 14 becoming a second insulating film is formed to cover the conductors 12, 13. A cavity 15 having its height exceeding the upper and lower ends of each conductor 12, 13 is provided between the conductors 12, 13. For this, the cavity 15 is formed also on an upper layer part of the first interlayer insulating film 11 and also on a lower layer part of the second interlayer insulating film 14 formed at a location higher than the upper surface of each conductor 12, 13. Thus, a specific inductive capacity between the conductors is reduced and hence capacity between the conductors is reduced.

公开(公告)号：JPH09326437A

公开(公告)日：1997-12-16

申请号：JP16688996

申请日：1996-06-06

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  HAYASHIDA SEIJI

IPC: H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a compound dielectric film having an effective specific dielectric constant as small as 0 to 2 in absolute value keeping insulation between conductors and a semiconductor device wherein the compound dielectric film is used as an insulating film between conductors. SOLUTION: A compound dielectric film formed as an insulating film between conductors 11 and 12 opposed each other is composed of a nonconductor 13 and a conductor 14. In the serially-connected model the nonconductor 13 and the conductor 14 are formed serially between the conductors 11 and 12, in the serially and parallel-connected model the conductors 14 are formed in the nonconductor 13, and in the parallel-connected model the nonconductor 13 and the conductor 14 are formed parallel between the conductors 11 and 12. The nonconductor 13 may be SiO2 , Si3 N4 , etc. The conductor 14 may be a metal, semimetal, semiconductor having conduction electrons, organic material having conduction electrons, etc. The volume ratio of the conductor 14 is selected in response to a designed effective specific dielectric constant.