公开(公告)号：JPH04103122A

公开(公告)日：1992-04-06

申请号：JP22195890

申请日：1990-08-23

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  IKEDA AKIO ,  MIYAJIMA TAKAO ,  OKUYAMA HIROYUKI

IPC: H01L21/28 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327

Abstract: PURPOSE:To accurately obtain ohmic contact with a P-type ZnSSe semiconductor in an excellent reproducible manner and highly reliable manner, and also in a high yield manner by a method wherein, before ohmic-contacting metal to a semiconductor, at least the ohmic-contacting part of the semiconductor with the metal is oxidation- treated beforehand. CONSTITUTION:When the Au or Au alloy metal, against the P-type impurity such as O, Li, N-doped ZnSxSe1-x, for example (provided that it is semiconductor 1 consisting of 0