-
公开(公告)号：AU2003289069A1
公开(公告)日：2004-07-22
申请号：AU2003289069
申请日：2003-12-12
Applicant: SONY CORP
Inventor： TOKITA YUICHI , SUZUKI YUSUKE , MOROOKA MASAHIRO , ISHIBASHI KENICHI , NODA KAZUHIRO
IPC: H01L31/04 , H01G9/20 , H01L31/042 , H01M14/00
Abstract: In a dye-sensitized photoelectric transfer device having a semiconductor layer and an electrolyte layer between a transparent conductive substrate and a counter conductive substrate, the semiconductor layer is composed of titania nanotubes, and a sensitizing dye is retained by the titania nanotubes. The titania nanotubes preferably have an anatase-type crystalline form. The dye-sensitized photoelectric transfer device is used as a dye-sensitized solar cell.
-
公开(公告)号：AU2003296152A1
公开(公告)日：2004-08-23
申请号：AU2003296152
申请日：2003-12-26
Applicant: SONY CORP
Inventor： ISHIBASHI KENICHI , TOKITA YUICHI , MOROOKA MASAHIRO , SUZUKI YUSUKE , NODA KAZUHIRO
-
公开(公告)号：JP2004207012A
公开(公告)日：2004-07-22
申请号：JP2002374184
申请日：2002-12-25
Inventor： TOKITA YUICHI , SUZUKI YUSUKE , MOROOKA MASAHIRO , ISHIBASHI KENICHI , NODA KAZUHIRO
IPC: H01L31/04 , H01G9/20 , H01L31/042 , H01M14/00
CPC classification number: H01M14/005 , B82Y10/00 , H01G9/2031 , H01G9/2063 , Y02E10/542 , Y02P70/521
Abstract: PROBLEM TO BE SOLVED: To provide a dye-sensitized photoelectric transducing device capable of using an arbitrary sensitizing dye, manufacturable at low cost, and having high photoelectric transducing efficiency; and to provide its manufacturing method. SOLUTION: In this dye-sensitized photoelectric transducing device wherein a semiconductor layer 4 and an electrolyte layer 5 are formed between a transparent conductive substrate 1 and conductive substrates 2 and 3 facing to it, a substance formed of titania nanotubes is used for the semiconductor layer 4, and the sensitizing dye is supported by the titania nanotubes. A crystal type or anatase type titania nanotube is preferably used as the titania nanotube. The dye-sensitized photoelectric transducing device is used for a dye-sensitized solar cell. COPYRIGHT: (C)2004,JPO&NCIPI
-
公开(公告)号：JP2004234988A
公开(公告)日：2004-08-19
申请号：JP2003021410
申请日：2003-01-30
Inventor： ISHIBASHI KENICHI , TOKITA YUICHI , MOROOKA MASAHIRO , SUZUKI YUSUKE , NODA KAZUHIRO
CPC classification number: H01G9/2031 , C09C1/3607 , Y02E10/542 , Y02P70/521
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion element with a high photoelectric conversion rate having a semiconductor layer containing very little residual organic substance, composed of semiconductor fine particles having a small crystal diameter, large specific area, and a crystal structure with high photocatalytic activity, and to provide a manufacturing method of the same. SOLUTION: The semiconductor layer 2 composed of semiconductor fine particles is formed by applying and baking a paste of a mixture of semiconductor fine particles of titanium oxide fine particles or the like and a binder composed of polymeric compound on a transparent conductive substrate 1, and then, residual organic substance remaining in the semiconductor layer 2 is removed by irradiating ultraviolet rays on the semiconductor layer 2 and utilizing the photocatalytic activity of the semiconductor fine particles. COPYRIGHT: (C)2004,JPO&NCIPI
-
-
-
Search Results
4
records
(took 0.023 seconds)
