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    Method of forming organic thin film and method of manufacturing organic device
    6.
    发明专利
    Method of forming organic thin film and method of manufacturing organic device 有权
    形成有机薄膜的方法和制造有机装置的方法

    公开(公告)号：JP2012044111A

    公开(公告)日：2012-03-01

    申请号：JP2010186436

    申请日：2010-08-23

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： GOTO OSAMU ,  KOBAYASHI NORIHITO ,  YASUHARA DAISUKE ,  SHIMIZU KEISUKE ,  TOMITANI SHIGETAKA ,  MURAKAMI YOSUKE ,  KATSUHARA MASAHISA ,  OE TAKAHIRO ,  KAWASHIMA NORIYUKI ,  TAKAHASHI YUKA ,  FUKUDA TOSHIO ,  ISHII YUI

    IPC: H01L21/368 ,  H01L21/336 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H05B33/10

    Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an organic thin film capable of forming a single crystal organic thin film quickly and easily while controlling the thickness and size.SOLUTION: After supplying organic solution 20 to one surface of a film deposition substrate 10 (a wide solution storage region 11 and a narrow solution constriction region 12 connected thereto) supported by a temperature controllable support 1, a temperature controllable moving body 4 is moved along the surface of the support 1 while touching the organic solution 20 independently from the support 1. Temperature TS of the support 1 is set between the solubility curve and supersolubility curve for the organic solution 20, and the temperature TM of the moving body 4 is set on the higher temperature side than the solubility curve.

    Abstract translation: 要解决的问题：提供一种能够在控制厚度和尺寸的同时快速且容易地形成能够形成单晶有机薄膜的有机薄膜的方法。 解决方案：在由可控温度支持体1支撑的成膜基板10（宽溶液储存区域11和与其连接的窄溶液收缩区域12）的一个表面上提供有机溶液20之后，将温度可控的移动体4 沿着支撑体1的表面移动，同时独立于载体1接触有机溶液20.载体1的温度TS设置在有机溶液20的溶解度曲线和超溶解曲线之间，并且移动体的温度TM 4设置在比溶解度曲线更高的温度侧。 版权所有（C）2012，JPO＆INPIT

    Pattern forming method and method of manufacturing semiconductor device
    7.
    发明专利
    Pattern forming method and method of manufacturing semiconductor device 审中-公开
    图案形成方法和制造半导体器件的方法

    公开(公告)号：JP2008205144A

    公开(公告)日：2008-09-04

    申请号：JP2007038864

    申请日：2007-02-20

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： KAWASHIMA NORIYUKI ,  NOMOTO AKIHIRO

    IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L29/786 ,  H01L51/05

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method which prevents ink oozing or traveling to back side by screen printing with a stabilized printed shape, and also a method of manufacturing a semiconductor device using the pattern forming method. SOLUTION: In the pattern forming method and the method of manufacturing a semiconductor device having a source/drain electrode 12, a gate insulated film, an organic semiconductor layer, and a gate electrode laminated in this order on a substrate 11 using the pattern forming method; a liquid repellent layer A 1 is formed on the substrate 11 with a conductive film 12' disposed therebetween, and then a resist ink pattern R 1 ' is printed by screen printing to form a resist pattern R 1 on the liquid repellent layer A 1 , and the conductive film 12' is etched with use of the resist pattern R 1 as a mask to form the source/drain electrode 12. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种通过丝网印刷以稳定的印刷形状防止油墨渗出或向背侧行进的图案形成方法，以及使用图案形成方法制造半导体器件的方法。 解决方案：在图案形成方法和制造具有源极/漏电极12，栅绝缘膜，有机半导体层和栅电极的半导体器件的方法中，依次层叠在基板11上，使用 图案形成方法; 在衬底11上形成有防水层A ，其间设置有导电膜12'，然后通过丝网印刷印刷抗蚀剂油墨图案R 1 在拒液层A 1上形成抗蚀剂图案R 1 ，并且使用抗蚀剂图案R SB 1 作为掩模形成源极/漏极12。版权所有（C）2008，JPO＆INPIT

    Display device
    8.
    发明专利
    Display device 审中-公开
    显示设备

    公开(公告)号：JP2006058730A

    公开(公告)日：2006-03-02

    申请号：JP2004242049

    申请日：2004-08-23

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： KAWASHIMA NORIYUKI

    IPC: G09F9/30 ,  G02F1/1343 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L51/05

    Abstract: PROBLEM TO BE SOLVED: To provide a display device which controls driving of pixels by TFTs and auxiliary capacitors and in which an aperture ratio can be maximized while a voltage retention is sufficiently maintained. SOLUTION: The display device is equipped with a drive circuit substrate 118, a counter substrate 119, and a liquid crystal layer 112 sealed between the two substrates. The drive circuit substrate 118 has the organic TFT 117 for driving control corresponding to each pixel and the auxiliary capacitor section 120. The source electrode 108, drain electrode 109, and gate electrode 104 of the organic TFT 117 and the auxiliary capacitor electrode 103 of the auxiliary capacitor section 120, and particularly the auxiliary capacitor electrode 103 are formed of transparent conductive materials to maximize the aperture ratio. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种通过TFT和辅助电容器来控制像素的驱动并且在充分保持电压保持的同时可以使开口率最大化的显示装置。

    解决方案：显示装置配备有驱动电路基板118，对置基板119和密封在两个基板之间的液晶层112。 驱动电路基板118具有用于驱动对应于每个像素的辅助电容器部分120的有机TFT 117.有机TFT 117的源电极108，漏电极109和栅电极104以及辅助电容器电极103 辅助电容器部分120，特别是辅助电容器电极103由透明导电材料形成以使开口率最大化。 版权所有（C）2006，JPO＆NCIPI

    MANUFACTURE OF MEMORY ELEMENT
    10.
    发明专利
    MANUFACTURE OF MEMORY ELEMENT 失效

    公开(公告)号：JP2001085545A

    公开(公告)日：2001-03-30

    申请号：JP26196999

    申请日：1999-09-16

    Applicant: SONY CORP

    Inventor： TAIRA KENICHI ,  KAWASHIMA NORIYUKI ,  NOGUCHI TAKASHI ,  GOSAIN D P ,  USUI SETSUO

    IPC: H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L21/4763 ,  H01L27/115 ,  H01L29/423 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

    Abstract: PROBLEM TO BE SOLVED: To provide a method which can form semiconductor dots as desired, while making a semiconductor film polycrystalline without spoiling the planarity of the top surface of a polycrystalline silicon layer and a tunnel oxide film and can easily manufacture a memory element, having a fine particle floating gate easily at a low cost, even when the substrate is made of glass or plastic. SOLUTION: This manufacturing method includes a step for making a semiconductor film polycrystalline by performing a 1st laser annealing process, after forming the semiconductor film on a substrate 1, a step for forming a semiconductor dot forming film 7 of non-stoichiometric composition containing semiconductor elements excessively on the semiconductor film, and a stage for forming semiconductor dots by dispersing particulates of a semiconductor in the semiconductor dot forming film, by performing a 2nd laser annealing process, and the pulse energy density of the laser used for the 1st laser annealing process is set larger than the pulse energy density of the laser used for the 2nd laser annealing process.

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