公开(公告)号：JPH0721529A

公开(公告)日：1995-01-24

申请号：JP18331893

申请日：1993-06-30

Applicant: SONY CORP

Inventor： KUDO HISASHI ,  SUGANO YOSHIHIRO ,  SUGAWARA JUNICHI

IPC: G11B5/39

Abstract: PURPOSE:To ensure the connection between an MR element and an electrode, to secure the characteristic of the MR element and to improve productivity and production yield. CONSTITUTION:Front and rear electrodes 7 and 8 are formed on an MR element 6 through a second insulating film 11, and the electrodes 7 and 8 are electrically connected to the MR element 6 through front and rear electrode connecting holes 14 and 15. An aluminum oxide layer 13 with the oxygen content in the thickness direction gradually increased from the MR element 6 side toward the electrodes 7 and 8 is provided as the base film of the second insulating film 11. Meanwhile, when magneto-resistance effect magnetic head is produced, the aluminum oxide layer 13 is formed on the MR element 6 while gradually increasing the oxygen content in the thickness direction, then a part of the layer 13 is removed, the connecting holes 14 and 15 are formed, and the electrodes 7 and 8 are laminated thereon.

公开(公告)号：JP2001148103A

公开(公告)日：2001-05-29

申请号：JP33049199

申请日：1999-11-19

Applicant: SONY CORP

Inventor： ABE MORIAKI ,  KUDO HISASHI

IPC: G11B5/39

Abstract: PROBLEM TO BE SOLVED: To enhance electrical insulation property between a magnetoresistive element part, which is formed on a substrate as a stepped part, and an upper shield, which is formed on the magnetoresistive element part, while interposing an electrical insulation film which is to become an upper gap. SOLUTION: This magnetoresistive element part is formed o the substrate as the stepped part by the ion beam sputtering, i.e., having a target consisting of an electrical insulation material irradiated with an ion beam. When the electrical insulation film is formed on the magnetoresistive element part, the incident angle of sputtering particles is made to be 0-60 deg. with respect to the substrate surface.

公开(公告)号：JPH0944815A

公开(公告)日：1997-02-14

申请号：JP19563095

申请日：1995-07-31

Applicant: SONY CORP

Inventor： KUDO HISASHI

IPC: G11B5/31 ,  G11B5/39

Abstract: PROBLEM TO BE SOLVED: To prevent the peeling of an Al2 O3 layer due to great dependency of the film stress value of the Al2 O3 layer on the concn. of oxygen in sputtering gas, imbalance of Al2 O3 layers between thin film magnetic heads, a change in magnetic characteristics and other trouble. SOLUTION: A 1st Al2 O3 film 32 as an inside oxidized film and a 2nd Al2 O2 film 33 as an outside oxidized film are formed excluding the vicinity of a connection terminal connecting each magnetic head part to an external wire so that the oxygen content of the 2nd Al2 O3 film 33 is made lower than that of the 1st Al2 O3 film 32 and a protective film 31 is formed. A connection terminal 34 as one of four connection terminals disposed on a nonmagnetic substrate 11 is formed so that it is embedded in only the 1st Al2 O3 film 32 except the top surface.

公开(公告)号：JPH07331429A

公开(公告)日：1995-12-19

申请号：JP14538994

申请日：1994-06-03

Applicant: SONY CORP

Inventor： KUDO HISASHI

IPC: C23C14/08 ,  C23C14/34 ,  C23F4/00 ,  G11B5/31 ,  H01L21/203

Abstract: PURPOSE:To stably form a good-quality protective thin film excellent in step coverage and reduced in stress at the time of forming the protective film on a thin-film magnetic head by alternately conducting the formation of the thin film by sputtering and etching. CONSTITUTION:An oxide film of Al2O3, etc., is formed by sputtering as the protective film of the transducer part of a thin-film magnetic head. In this case, the Al2O3, film is firstly formed by the low-bias sputtering of

公开(公告)号：JP2011044719A

公开(公告)日：2011-03-03

申请号：JP2010204770

申请日：2010-09-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： FURUSHIMA YUJI ,  ABE HIROAKI ,  KUDO HISASHI ,  FUJIMOTO TSUTOMU ,  AOSHIMA KENTARO

IPC: H01S5/022 ,  G11B7/125 ,  H01S5/22

CPC classification number: H01S5/4043 ,  B82Y20/00 ,  G11B7/1275 ,  G11B2007/0006 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2224 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device miniaturized by devising the arrangement of connection pads. SOLUTION: A first light emitting device 20 with chip-like first light emitting device 20 and second light emitting device superposed on each other on a sub-mount in this order, is provided with two light emitting devices. The second light emitting device is provided with one light emitting device. All connection pads 46, 48, 84 with each being electrically connected to respective corresponding electrodes for separately supplying current to the respective light emitting devices are formed on a surface of the first light emitting device 20. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供通过设计连接焊盘的布置来小型化的半导体发光器件。 解决方案：具有芯片状第一发光器件20和第二发光器件的第一发光器件20依次叠置在子安装座上，具有两个发光器件。 第二发光装置设置有一个发光装置。 在第一发光装置20的表面上形成有各自电连接到相应的相应电极的所有连接焊盘46,48,84，以分别供应各个发光器件的电流。（C）2011年， JPO＆INPIT

公开(公告)号：JP2005183621A

公开(公告)日：2005-07-07

申请号：JP2003421378

申请日：2003-12-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： CHIBA MARI ,  KUDO HISASHI ,  AZUMA SHINICHI

IPC: H01S5/223 ,  H01L21/302 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01L33/005 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/34326

Abstract: PROBLEM TO BE SOLVED: To prevent the overflow of carrier accompanied with the output improvement of a semiconductor laser or the deterioration of a heat saturation level and kink level.
SOLUTION: This method for manufacturing a semiconductor light emitting device has a process for growing a laminate semiconductor layer 11, a process for forming a ridge groove 22 and a process for forming a conductive prevention layer in the ridge groove. The process for forming the ridge groove 22 has first and second anisotropic etching processes and an isotropic etching process. In the first anisotropic etching process, the ridge groove which is not deep enough to cross an etching stop layer 7 is formed from the surface of the laminate semiconductor layer, and an etching mask is formed. In the second anisotropic etching process, the etching mask formed at the bottom of the groove is removed. In the isotropic etching process, etching is carried out to the etching stop layer 7, and the ridge groove only whose bottom is taper-shaped is formed. Afterward, a conduction preventing layer is selectively formed in the ridge groove.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了防止伴随半导体激光器的输出改善的载体的溢出或者热饱和度和扭结水平的劣化。 解决方案：这种制造半导体发光器件的方法具有用于生长叠层半导体层11的方法，用于形成脊槽22的工艺和在脊槽中形成导电防止层的工艺。 用于形成脊槽22的工艺具有第一和第二各向异性蚀刻工艺和各向同性蚀刻工艺。 在第一各向异性蚀刻工艺中，从叠层半导体层的表面形成不足够穿过蚀刻停止层7的脊槽，形成蚀刻掩模。 在第二各向异性蚀刻工艺中，去除形成在凹槽底部的蚀刻掩模。 在各向同性蚀刻工艺中，对蚀刻停止层7进行蚀刻，仅形成其底部呈锥形的脊形槽。 之后，在脊槽中选择性地形成导电防止层。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001084512A

公开(公告)日：2001-03-30

申请号：JP26377099

申请日：1999-09-17

Applicant: SONY CORP

Inventor： KUDO HISASHI ,  SASAKI SATOSHI

IPC: G11B5/31

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film magnetic head capable of accurately etching the bottom part of an upper layer core for constituting the thin film magnetic head and preventing the over-etching of the peak part of the upper layer core and re-deposition to the side face of the upper layer core. SOLUTION: At the time of successively forming a gap layer and a upper layer core 24 in a prescribed shape on the surface of a substrate 20 of a lower layer core, masking the upper layer core 24 and etching the gap layer and the substrate 20 of the lower layer core by an ion beam, the substrate 20 of the lower layer core is inclined so as to have a prescribed angle formed by the normal line L of the surface of the substrate 20 and the ion beam B and is swung at the prescribed angle with the normal line of the surface of the substrate 20 as the center.

公开(公告)号：JPH11161911A

公开(公告)日：1999-06-18

申请号：JP32175397

申请日：1997-11-21

Applicant: SONY CORP

Inventor： KUDO HISASHI

IPC: G11B5/31

Abstract: PROBLEM TO BE SOLVED: To improve the adhesion property of first and second magnetic films and to improve characteristics by allowing an embedment film of a specific small thickness to remain until a resist to be used is removed at the time of forming connection holes for connecting the first and second magnetic films to each other on this embedment film. SOLUTION: The first magnetic film 17 comprising a high saturation magnetic flux density material is patterned via a planarization film 12 on a lower layer magnetic core 4 in formation of an inductive head. The resist mask 22 provided with apertures 22a in correspondence to connecting hole forming regions C is formed in order to form the connecting holes for connecting the first magnetic film 17 and the second magnetic film in the embedment film 21 comprising SiO2 . The parts of the connecting hole forming regions C of the embedment film 21 are removed by a reactive ion etching method and at this time the parts of a thickness 20 to 100 nm are made to remain in the bottom. After the resist mask 22 is removed, the entire surface is subjected again to the reactive ion etching method, by which the remaining embedment film 21 is removed.

公开(公告)号：JP2003264333A

公开(公告)日：2003-09-19

申请号：JP2002065174

申请日：2002-03-11

Applicant: SONY CORP

Inventor： ARAKIDA TAKAHIRO ,  KUDO HISASHI

IPC: H01S5/024 ,  H01S5/028

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device having a low reflective film stable chemically and thermally and excellent in resistance to chemicals on an edge surface where a beam emerges, suppressing the occurrence of optical damage to the surface, and operating stably over a long time. SOLUTION: The semiconductor laser device 10 is an edge surface emitting 650 nm band red semiconductor laser device provided with a resonance structure 16 having an active layer 14 on a semiconductor substrate 12. The edge surface of the resonance structure is provided with a low reflective triple-layer film 18, and a back edge surface is provided with a high reflective multi-layer film 20, respectively. The low reflective triple-layer film 18 is constituted as a three- layer laminated film composed of a first Al 2 O 3 film 18a of 10 nm in thickness, an Si 3 N 4 film 18b of 90 nm in thickness, and a second Al 2 O 3 film 18c of 10 nm in thickness which are formed by a sputter method sequentially on the edge surface where the beam emerges. The low reflective triple-layer film 18 is set so that the reflectivity of the edge surface is 10%. The high reflective multi-layer film 20 formed on the back edge surface is constituted as a multi- layer structure composed of an Al 2 O 3 film 20a and an a-Si film 20b. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2000228005A

公开(公告)日：2000-08-15

申请号：JP2910199

申请日：1999-02-05

Applicant: SONY CORP

Inventor： KUDO HISASHI

IPC: G11B5/39 ,  G01R33/09 ,  H01F41/18

Abstract: PROBLEM TO BE SOLVED: To provide a magneto-resistance effect magnetic head capable of coping with high density recording by forming an extremely thin insulating film while securing an excellent insulation. SOLUTION: An ion bean deposition device 10 is used, which comprises a 1st grid gun 11 for sputtering a target 30 by emitting an ion beam accelerated by grids 23, 24 against the target 30, and a 2nd grid gun 12 for etching the substrate 31 by emitting the ion beam accelerated by the grids 27, 28 against the substrate 31. And, after the substrate 31 has been etched by making the 2nd grid gun ON, an insulating film is deposited on the substrate 31 by making the 2nd grid gun 12 OFF and performing sputtering by the 1st grid gun 11.