公开(公告)号：JP2009129992A

公开(公告)日：2009-06-11

申请号：JP2007300877

申请日：2007-11-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIZUGUCHI TETSUYA ,  YASUDA SHUICHIRO ,  SASAKI SATOSHI ,  YAMADA NAOMI

IPC: H01L27/10 ,  H01L45/00 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a memory element that prevents degradation in characteristics due to high temperature annealing after formation of element, and can be applied as a multi-use memory device.
SOLUTION: A high resistance layer 3A consisting of an oxide of a metal element, and an ion source layer 3B containing metal elements (Cu, Ag, Zn) becoming an ion source are provided in this order between a lower electrode 2 and an upper electrode 4. When the high resistance layer 3A is formed after the lower electrode 2, superfluous oxygen in the high resistance layer 3A is discharged by performing annealing at a temperature equal to or higher than the annealing temperature in subsequent annealing (after formation of element). An oxide of such an element as Ta, Hf, Si, Ni or Co, or an rare earth element (e.g., Gd or Ce) is employed in the high resistance layer 3A. Annealing may be performed after forming the lower electrode 2 and before forming the high resistance layer 3A.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造存储元件的方法，该存储元件防止在形成元件之后由于高温退火而导致的特性劣化，并且可以用作多用途存储器件。 解决方案：由金属元素的氧化物构成的高电阻层3A和成为离子源的含有金属元素（Cu，Ag，Zn）的离子源层3B依次设置在下电极2和 上电极4.当在下电极2之后形成高电阻层3A时，通过在随后的退火中等于或者高于退火温度的温度进行退火（在形成后）之后，高电阻层3A中的多余的氧被放电 元件）。 在高电阻层3A中使用Ta，Hf，Si，Ni或Co等元素或稀土类元素（如Gd或Ce）的氧化物。 在形成下电极2之后并且在形成高电阻层3A之前可以进行退火。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JPH11316908A

公开(公告)日：1999-11-16

申请号：JP12491898

申请日：1998-05-07

Applicant: SONY CORP

Inventor： SASAKI SATOSHI ,  KUDO HISASHI ,  SHIBAYAMA TETSUYA

IPC: G11B5/31

Abstract: PROBLEM TO BE SOLVED: To decrease etching quantity of a 2nd pole which serves as a mask at the time of etching. SOLUTION: A method for manufacturing a thin-film magnetic head made by forming a 1st and a 2nd magnetic core so as to opposite to each other through a magnetic gap is provided with a 1st magnetic layer forming process for forming a 1st magnetic layer 4 becoming a 1st magnetic core on a base body, a nonmagnetic layer forming process for forming a nonmagnetic layer 6 becoming a magnetic gap on the 1st magnetic layer 4, a 2nd magnetic layer forming process for forming a 2nd magnetic layer 11 in a specific shape becoming a 2nd magnetic core on the nonmagnetic layer 6 and an etching process for making the nonmagnetic layer 6 and 1st magnetic layer 4 integrally in a specific shape by etching the nonmagnetic layer 6 and 1st magnetic layer 4 by using the 2nd magnetic layer as a mask. In the etching process, when the nonmagnetic layer 6 is etched, etching is carried out by reactive ion etching and when the 1st magnetic layer 4 is etched, etching is carried out by ion beam etching.

公开(公告)号：JP2010062247A

公开(公告)日：2010-03-18

申请号：JP2008224711

申请日：2008-09-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIZUGUCHI TETSUYA ,  YASUDA SHUICHIRO ,  SASAKI SATOSHI ,  YAMADA NAOMI

IPC: H01L27/10 ,  H01L45/00 ,  H01L49/00

CPC classification number: H01L45/141 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

Abstract: PROBLEM TO BE SOLVED: To provide a storage element which satisfies both the number of repeating operation and low voltage operating characteristics in the relation of trade-off. SOLUTION: The storage element includes a high-resistance layer 4 and an ion source layer 5 between an lower electrode 3 and an upper electrode 6. The high-resistance layer 4 is constituted by an oxide containing Te. An element other than the Te, for example, either Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu or Au may be added. When the Al is added to the Te, and further the Cu and the Zr are added, it is desirable that a composition ratio of the high-resistance layer 4 is adjusted in a range of, excepting oxygen, 30≤Te≤100 atm%, 0≤Al≤70 atm% and 0≤Cu+Zr≤36 atm%. The ion source layer 5 is constituted of at least one kind of metal element and at least one kind of chalcogen element out of Te, S and Se. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在折衷关系中满足重复操作次数和低电压操作特性两者的存储元件。 解决方案：存储元件在下电极3和上电极6之间包括高电阻层4和离子源层5.高电阻层4由含Te的氧化物构成。 可以添加Te以外的元素，例如Al，Zr，Ta，Hf，Si，Ge，Ni，Co，Cu或Au。 当将Al添加到Te中，并且再加入Cu和Zr时，希望高电阻层4的组成比在除氧之外的范围内调整，30≤Te≤100atm％ ，0≤Al≤70atm％，0≤Cu+Zr≤36atm％。 离子源层5由至少一种金属元素和Te，S和Se中的至少一种硫族元素构成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009164467A

公开(公告)日：2009-07-23

申请号：JP2008002216

申请日：2008-01-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YASUDA SHUICHIRO ,  TSUSHIMA TOMOHITO ,  SASAKI SATOSHI ,  ARAYA KATSUHISA

IPC: H01L27/10 ,  G11C13/00

CPC classification number: G11C13/02 ,  G11C2213/11 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625

Abstract: PROBLEM TO BE SOLVED: To improve data retaining characteristic at writing, in a memory device of resistance varying type. SOLUTION: A memory layer 17 comprising a high-resistance layer 17A and an ion source layer 17B is provided between a lower electrode 14 and an upper electrode 18. The ion source layer 17B contains an O (oxygen) as an additional element together with an ion conductive material such as an S (sulfur), Se (selenium) and Te (tellurium) (chalcogenide element) and a metal element, which ionize, such as a Zr (zirconium). Since the oxygen is contained in the ion source layer 17B, retention performance for a high resistance condition at writing is improved. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提高写入时的数据保存特性，在电阻变化型存储器件中。 解决方案：包括高电阻层17A和离子源层17B的存储层17设置在下电极14和上电极18之间。离子源层17B含有作为附加元素的O（氧） 以及诸如S（硫），Se（硒）和Te（碲）（硫属元素元素）的离子导电材料和电离的Zr（锆）等金属元素。 由于离子源层17B中含有氧，因此提高了写入时的高电阻条件的保持性能。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009130344A

公开(公告)日：2009-06-11

申请号：JP2007307437

申请日：2007-11-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIZUGUCHI TETSUYA ,  YASUDA SHUICHIRO ,  SASAKI SATOSHI ,  YAMADA NAOMI

IPC: H01L27/10 ,  H01L45/00 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To provide a memory element that prevents deterioration in characteristics resulting from hot annealing after formation of an element. SOLUTION: A high resistance layer 3A consisting of an oxide of a metal element, and an ion source layer 3B containing metal elements (Cu, Ag, Zn) becoming an ion source are formed in this order between a lower electrode 2 and an upper electrode 4. The high resistance layer 3A includes an oxygen concentration gradient in the thickness direction, and the oxygen concentration at a part of the high resistance layer 3A touching the ion source layer 3B is below the oxygen concentration in the center of the high resistance layer 3A. Oxygen diffused from an overoxygen portion in the center of the high resistance layer 3A does not reach the ion source layer 3B during subsequent annealing, and variation in characteristics resulting from hot annealing in a subsequent step can be controlled. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种防止在形成元件之后由热退火引起的特性劣化的存储元件。 解决方案：由金属元素的氧化物构成的高电阻层3A和成为离子源的含金属元素（Cu，Ag，Zn）的离子源层3B依次形成在下电极2和 上电极4.高电阻层3A包括在厚度方向上的氧浓度梯度，并且接触离子源层3B的高电阻层3A的一部分的氧浓度低于高中心处的氧浓度 电阻层3A。 从高电阻层3A的中心的过氧化部分扩散的氧在后续的退火中不会到达离子源层3B，并且可以控制随后的步骤中由热退火产生的特性的变化。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006066482A

公开(公告)日：2006-03-09

申请号：JP2004244703

申请日：2004-08-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SASAKI SATOSHI ,  FURUKAWA AKIO ,  HOSHI MITSUNARI ,  MATSUZONO JUNJI

IPC: H01S5/183 ,  H01S5/042

Abstract: PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser element in which electrode wiring has no possibility of disconnection, fabrication time can be shortened, yield can be prevented from lowering, and reliability can be enhanced.
SOLUTION: A mesa portion 10 consisting of columnar portions C1 and C2 and a prism portion S1 is formed on a substrate 11. A p-side electrode layer 20 is provided on the mesa portion 10. The p-side electrode layer 20 consists of a joint 20A being connected electrically with a p-side electrode contact layer 18, a pad 20B for wire bonding, and an interconnect line 20C for connecting the joint 20A and the pad 20B electrically wherein the joint 20A is provided with an opening 20D for ejecting light. The joint 20A, the pad 20B and the interconnect line 20C are provided, respectively, on the columnar portion C1, the columnar portion C2 and the prism portion S1. A current injection region (AlAs layer) 17A exists only in a region opposing the opening 20D.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种其中电极布线不具有断开可能性的表面发射半导体激光元件，可以缩短制造时间，可以防止产率降低，并且可以提高可靠性。 解决方案：在基板11上形成由柱状部C1和C2构成的台面部分10和棱镜部分S1。在台面部分10上设置有p侧电极层20.p侧电极层20 由与p侧电极接触层18电连接的接头20A，用于引线接合的焊盘20B和用于将接头20A和焊盘20B电连接的互连线20C，其中接头20A设置有开口20D 用于弹出光。 接头20A，焊盘20B和互连线20C分别设置在柱状部分C1，柱状部分C2和棱镜部分S1上。 电流注入区域（AlAs层）17A仅存在于与开口20D相对的区域中。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2002100004A

公开(公告)日：2002-04-05

申请号：JP2000289416

申请日：2000-09-22

Applicant: SONY CORP

Inventor： SUGAWARA NOBUHIRO ,  TERADA SHOJI ,  SASAKI SATOSHI ,  AKAMA HIROSHI ,  MATSUKI HIROMI ,  KITAMURA KENICHI

IPC: G11B5/31

Abstract: PROBLEM TO BE SOLVED: To perform a proper operation in a high frequency band by suppressing the reduction of inductance L as much as possible in the high frequency band, and maintaining high head efficiency in the high frequency band. SOLUTION: When a core connecting height equivalent to the length of a part for connection between lower and upper layer cores 14 and 17 is (h), and the core thickness of the thinner film thickness of the lower layer core 14 or the upper layer core 17 is (t), the size of the core connection height (h) is defined so as to set a value (h/t) obtained by standardizing the core connection height (h) by the core thickness (t) in the range of 0.6

公开(公告)号：JP2001084512A

公开(公告)日：2001-03-30

申请号：JP26377099

申请日：1999-09-17

Applicant: SONY CORP

Inventor： KUDO HISASHI ,  SASAKI SATOSHI

IPC: G11B5/31

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film magnetic head capable of accurately etching the bottom part of an upper layer core for constituting the thin film magnetic head and preventing the over-etching of the peak part of the upper layer core and re-deposition to the side face of the upper layer core. SOLUTION: At the time of successively forming a gap layer and a upper layer core 24 in a prescribed shape on the surface of a substrate 20 of a lower layer core, masking the upper layer core 24 and etching the gap layer and the substrate 20 of the lower layer core by an ion beam, the substrate 20 of the lower layer core is inclined so as to have a prescribed angle formed by the normal line L of the surface of the substrate 20 and the ion beam B and is swung at the prescribed angle with the normal line of the surface of the substrate 20 as the center.

公开(公告)号：JPH1168193A

公开(公告)日：1999-03-09

申请号：JP22975597

申请日：1997-08-26

Applicant: SONY CORP

Inventor： SHOJI MITSUHARU ,  SASAKI SATOSHI

IPC: G11B5/39 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To provide an element of high quality which does not produce burrs and can be lifted off accurately, by forming a patterning layer on a substrate with a lift-off method, and by forming in the patterning layer a plural kinds of discriminating patterns for discriminating the state of lift-off and having different widths when it is lifted off. SOLUTION: A laminated body 13 comprising a soft magnetic film 10, a nonmagnetic film 11, and a magnetoresistance film (MR film) 12 is formed on a substrate 1 and is later made a MR element of a predetermined shape. A resist film 14 is formed on the laminated body 13 and is baked, and another resist film 15 is formed thereon. Then the laminated body 13 is exposed to a discriminating pattern and the resist films 14, 15 are developed. The resist film 15 is removed by the development except for the part corresponding to the discriminating pattern, and the resist film 14 is etched at the side to form the plural kinds of discriminating resists 17. The laminated body 13 except for the region of the discriminating resist 17 is removed by etching to expose a lower gap layer 4, which prevents the generation of burr.

公开(公告)号：JP2005159272A

公开(公告)日：2005-06-16

申请号：JP2004136295

申请日：2004-04-30

Applicant: Toshihiko Baba ,  Sony Corp ,  ソニー株式会社 ,  俊彦 馬場

Inventor： FURUKAWA AKIO ,  BABA TOSHIHIKO ,  MATSUZONO JUNJI ,  SASAKI SATOSHI ,  HOSHI MITSUNARI

IPC: H01S5/18 ,  H01S5/183 ,  H01S5/187

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18319 ,  H01S5/18327 ,  H01S2301/02 ,  H01S2301/166

Abstract: PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting laser which is constructed so that a single transversal mode of a large output can be stably kept and an optical apparatus which is equipped with a light source composed of the vertical cavity surface emitting laser.
SOLUTION: A scattering loss structure made up of low refraction areas are located around a main current passage in the vertical cavity surface emitting laser, i.e. a cavity composition, and the low refraction index areas are intermittently located, and the shape of the tip toward the center is tapered, e.g. an acute angle. Thereby, the loss of the light emitting laser of a higher mode, which is positioned in a further surrounding portion among the cavity compositions, is large, then, the vertical cavity surface emitting laser oscillating a good single mode laser can be made up.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种垂直腔面发射激光器，其被构造成可以稳定地保持大输出的单个横向模式，以及配备有由垂直腔表面组成的光源的光学装置 发射激光。 解决方案：由低折射区域构成的散射损耗结构位于垂直腔表面发射激光器中的主电流通道周围，即腔体组成，并且低折射率区域间歇地定位，并且形状 尖端朝向中心是锥形的，例如 一个锐角。 因此，位于空腔组成中的另外的周围部分的较高模式的发光激光器的损耗大，则可以构成振荡良好的单模激光器的垂直腔表面发射激光器。 版权所有（C）2005，JPO＆NCIPI