公开(公告)号：DE2744837A1

公开(公告)日：1978-04-13

申请号：DE2744837

申请日：1977-10-05

Applicant: SONY CORP

Inventor： MIFUNE TADAYOSHI ,  NAKANE YASUAKI ,  MORI IWAO

IPC: G03F1/00 ,  H01L21/312

公开(公告)号：CA1026456A

公开(公告)日：1978-02-14

申请号：CA223328

申请日：1975-03-27

Applicant: SONY CORP

Inventor： YAMANAKA SEISUKE ,  KANOU YASUO ,  MIFUNE TADAYOSHI ,  SHIMADA SATOSHI

IPC: H04N5/335 ,  H04N5/341 ,  H04N5/349 ,  H04N5/351 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378 ,  H04N9/04 ,  H04N9/07 ,  H04N3/14

Abstract: A solid-state video camera employing a plurality of image sensing means in the form of charge coupled device chips which are arranged in such a manner that the video image cast on respective chips are displaced by distance equal to tau H/N where tau H is the reciprocal of the image sampling frequency, also referred to as the alignment pitch of the picture elements in the horizontal direction and N is the number of charge coupled chips. After converting the images into electrical signals, read-out timings of given picture elements of respective chips are shifted in time in accordance with the shift in distance between the images on the respective chips prior to mixing the output signals. In this way a video output signal having a wide-band width is obtained. In addition, color video information is possible by the use of color filters which may be disposed in front of the respective charge coupled chips.

公开(公告)号：DE2617398A1

公开(公告)日：1976-11-04

申请号：DE2617398

申请日：1976-04-21

Applicant: SONY CORP

Inventor： AOKI TERUAKI ,  MATSUSHITA TAKESHI ,  MIFUNE TADAYOSHI ,  ABE MOTOAKI

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/265 ,  H01L21/329 ,  H01L21/331 ,  H01L21/76 ,  H01L23/29 ,  H01L29/78 ,  H01L21/302

Abstract: Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.

公开(公告)号：CA1070855A

公开(公告)日：1980-01-29

申请号：CA287526

申请日：1977-09-26

Applicant: SONY CORP

Inventor： MIFUNE TADAYOSHI ,  NAKANE YASUAKI ,  MORI IWAO

IPC: G03F1/00 ,  H01L21/72 ,  H01L21/467

Abstract: A mask for optical exposure including a transparent supporting plate, a transparent conformable film having a predetermined opaque pattern formed thereon, and a penetrating hole formed through the transparent supporting plate, in which the transparent conformable film is attached to the transparent supporting plate so that a gas-tight space is formed between them, and the external of the transparent supporting plate is communicated with the gas-tight space through the penetrating hole.

公开(公告)号：CA1059241A

公开(公告)日：1979-07-24

申请号：CA250484

申请日：1976-04-20

Applicant: SONY CORP

Inventor： AOKI TERUAKI ,  MATSUSHITA TAKESHI ,  MIFUNE TADAYOSHI ,  ABE MOTOAKI

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/265 ,  H01L21/329 ,  H01L21/331 ,  H01L21/76 ,  H01L23/29 ,  H01L29/78 ,  H01L21/26

Abstract: A silicon ion beam plants silicon ions in a silicon compound layer such as SiO2 or Si3N4 on a silicon substrate. Silicon ions are implanted by a silicon ion beam into the silicon compound layer and into a portion of the substrate on the side of its interface with the compound layer. The compound layer is therefore converted into a semi-insulating layer. The substrate is also converted into an amorphous silicon portion. The substrate is then annealed to reconvert the silicon portion into a single crystal with the remaining portion of the substrate. According to the method, an improved passivation property is imparted to the silicon compound layer and an exact control of the oxygen or nitrogen concentration and distribution is achieved.

公开(公告)号：CA1056058A

公开(公告)日：1979-06-05

申请号：CA242395

申请日：1975-12-23

Applicant: SONY CORP

Inventor： KANO YASUO ,  FURUKAWA SHUNSUKE ,  MIFUNE TADAYOSHI

IPC: H01L27/108 ,  H01L27/148 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/3728

Abstract: A semiconductor image sensor as a sensing structure divided into vertical columns and horizontal rows of elemental sections. Each element includes a photo-sensor and a portion to receive charge overflow. The photo-sensors and portions to receive overflow are covered by a transparent electrode. Each elemental section in each vertical column is connected to a vertical shift register by a separate charge transfer section covered by a shift electrode structure to which twophase clock pulses are applied. One end of all of the vertical shift registers is connected to a three-phase horizontal shift register. When the potential of a given photo-sensor is higher than that of the transfer section connected to it, light-generated carriers in the photo-sensor are transferred to the vertical shift register to which that transfer section is connected.

公开(公告)号：CA1071772A

公开(公告)日：1980-02-12

申请号：CA250473

申请日：1976-04-20

Applicant: SONY CORP

Inventor： AOKI TERUAKI ,  MATSUSHITA TAKESHI ,  MIFUNE TADAYOSHI ,  HAYASHI HISAO

IPC: H01L27/04 ,  H01L21/00 ,  H01L21/265 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/329 ,  H01L21/331 ,  H01L21/76 ,  H01L21/822 ,  H01L23/29 ,  H01L23/31 ,  H01L29/73 ,  H01L29/78 ,  H01L29/8605 ,  H01L21/18

Abstract: An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 107 to 1011 ohm-cm, which has improved passivation property.

公开(公告)号：DE2617397A1

公开(公告)日：1976-11-04

申请号：DE2617397

申请日：1976-04-21

Applicant: SONY CORP

Inventor： AOKI TERUAKI ,  MATSUSHITA TAKESHI ,  MIFUNE TADAYOSHI ,  HAYASHI HISAO

IPC: H01L27/04 ,  H01L21/00 ,  H01L21/265 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/329 ,  H01L21/331 ,  H01L21/76 ,  H01L21/822 ,  H01L23/29 ,  H01L23/31 ,  H01L29/73 ,  H01L29/78 ,  H01L29/8605

Abstract: An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 107 to 1011 ohm-cm, which has improved passivation property.

公开(公告)号：DE2558337A1

公开(公告)日：1976-07-08

申请号：DE2558337

申请日：1975-12-23

Applicant: SONY CORP

Inventor： KANO YASUO ,  FURUKAWA SHUNSUKE ,  MIFUNE TADAYOSHI

IPC: H01L27/108 ,  H01L27/148 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/3728 ,  H01L27/14 ,  H01L29/66

公开(公告)号：JPS5375136A

公开(公告)日：1978-07-04

申请号：JP15137476

申请日：1976-12-15

Applicant: SONY CORP

Inventor： MIFUNE TADAYOSHI ,  NAKANE YASUAKI

IPC: C25D11/00 ,  C25D11/02 ,  C25F3/14