公开(公告)号：DE69102092T2

公开(公告)日：1994-09-01

申请号：DE69102092

申请日：1991-03-25

Applicant: SONY CORP

Inventor： YAMAMOTO TADASHI ,  IKEDA MASAO ,  MIKATA YASUE

IPC: H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

Abstract: A semiconductor laser is formed into a double hereto junction structure comprising an n-type cladding layer (3) and a p-type cladding layer (5) with an active layer (4) interposed therebetween. The p-type cladding layer (5) has a laminated structure consisting of a first cladding layer (51) of (AlxGa1-x)InP disposed on one side adjacent to the active layer (4) and a second cladding layer (52) of AlyGa1-yAs disposed on the reverse side. A deterioration preventive layer (11) of AlzGa1-yAs is included in the first cladding layer (51) at a position spaced apart from the second cladding layer (52) by a predetermined distance. In addition, the second cladding layer (52) is partially removed, and a current stricture layer (10) is formed in such removed portion.

公开(公告)号：DE69102092D1

公开(公告)日：1994-06-30

申请号：DE69102092

申请日：1991-03-25

Applicant: SONY CORP

Inventor： YAMAMOTO TADASHI ,  IKEDA MASAO ,  MIKATA YASUE

IPC: H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

Abstract: A semiconductor laser is formed into a double hereto junction structure comprising an n-type cladding layer (3) and a p-type cladding layer (5) with an active layer (4) interposed therebetween. The p-type cladding layer (5) has a laminated structure consisting of a first cladding layer (51) of (AlxGa1-x)InP disposed on one side adjacent to the active layer (4) and a second cladding layer (52) of AlyGa1-yAs disposed on the reverse side. A deterioration preventive layer (11) of AlzGa1-yAs is included in the first cladding layer (51) at a position spaced apart from the second cladding layer (52) by a predetermined distance. In addition, the second cladding layer (52) is partially removed, and a current stricture layer (10) is formed in such removed portion.