Bright tin-nickel alloy plating electrolyte
    1.
    发明授权
    Bright tin-nickel alloy plating electrolyte 失效
    明亮的锡镍合金电镀电解液

    公开(公告)号:US3887444A

    公开(公告)日:1975-06-03

    申请号:US46052774

    申请日:1974-04-12

    Applicant: SONY CORP

    CPC classification number: C25D3/56 C25D3/60

    Abstract: A bright tin-nickel alloy plating electrolyte consists essentially of an aqueous main plating liquid containing a stannous salt, a nickel salt and an alkali-metal pyrophosphate, with a brightener additive in such main plating liquid which is a compound having a plurality of amino groups, for example, ethylenediamine, 1,2-propanediamine, 1,3-propanediamine, 1,4butanediamine, pentamethylenediamine, hexamethylenediamine, hydrazine, guanidine, urea or thiourea, and with a further addition of ammonia or an ammonium salt. The electrolyte may further have added thereto a compound having at least one -SX group in this electrolyte (in which X represents hydrogen, sodium or potassium), a peptone and/or protein, or a neutral amino acid which is free of sulphur or a salt thereof.

    Abstract translation: 明亮的锡镍合金电镀电解质基本上由含有亚锡盐,镍盐和碱金属焦磷酸盐的主要电镀液组成,在主镀液中具有增白剂添加剂,其为具有多个氨基的化合物 例如乙二胺,1,2-丙二胺,1,3-丙二胺,1,4-丁二胺,五亚甲基二胺,六亚甲基二胺,肼,胍,脲或硫脲,并进一步加入氨或铵盐。 在该电解质(其中X表示氢,钠或钾),蛋白胨和/或蛋白质或不含硫或中性氨基酸的中性氨基酸中,电解质可进一步加入具有至少一个-SX基团的化合物 的盐。

    Bath for the electrodeposition of birght tin-cobalt alloy
    2.
    发明授权
    Bath for the electrodeposition of birght tin-cobalt alloy 失效
    用于电镀锡 - 钴 - 钴合金的浴

    公开(公告)号:US3914160A

    公开(公告)日:1975-10-21

    申请号:US36054273

    申请日:1973-05-15

    Applicant: SONY CORP

    CPC classification number: C25D3/56 C25D3/60

    Abstract: A bright electroplated tin-cobalt alloy is obtained with an aqueous pyrophosphate electroplating bath which contains a brightening agent selected from the group which consists of amino carboxylic acid with sulphur, neutral amino acid, basic amino acid, peptone, protein, organo-sulphur compound, ammonia, ammonium salt, amine, and mixtures thereof.

    Abstract translation: 使用含有由氨基羧酸与硫,中性氨基酸,碱性氨基酸,蛋白胨,蛋白质,有机硫化合物组成的组中的增白剂的焦磷酸钙电镀浴,得到光亮的电镀锡 - 钴合金, 氨,铵盐,胺及其混合物。

    Semiconductor package and manufacturing method of lead frame

    公开(公告)号:SG60099A1

    公开(公告)日:1999-02-22

    申请号:SG1997002878

    申请日:1997-08-08

    Applicant: SONY CORP

    Abstract: A method of manufacturing a semiconductor chip that has electrode pads on the chip front surface and disposed inside a conductive outer ring. A film circuit is disposed on the chip front surface side. External connection thermals are formed on the film circuit so as to project there from. First leads electrically connect part of the electrode pads to part of the external connection terminals. A second lead electrically connects a grounding or power supply electrode pad to the outer ring, and a third lead electrically connects a grounding or power supply external connection terminal to the outer ring.

    BRIGHT TIN-NICKEL ALLOY PLATING ELECTROLYTE

    公开(公告)号:CA1045075A

    公开(公告)日:1978-12-26

    申请号:CA197770

    申请日:1974-04-18

    Applicant: SONY CORP

    Abstract: BRIGHT TIN-NICKEL ALLOY PLATING ELECTROLYTE A bright tin-nickel alloy plating electrolyte consists essentially of an aqueous main plating liquid containing a stannous salt, a nickel salt and an alkali-metal pyrophosphate, with a brightener additive in such main plating liquid which is a compound having a plurality of amino groups as its only functional groups, for example, ethylenediamine, 1,2-propanediamine, 1,3-propanediamine, 1,4-butanediamine, pentamethylenediamine, hexamethylenediame, hydrazine, quanidine, urea or thiourea. The bright tin-nickel alloy plating electrolyte may further contain ammonia or an ammonium salt, and the electrolyte, with or without the addition of the ammonia or ammonium salt,may further have added thereto a compound containing an -SX group (in which X represents hydrogen, sodium or potassium), a peptone and/or protein, or a neutral amino acid which is free of sulphur or a salt thereof.

    LAMINATED-PRINT COIL STRUCTURE
    6.
    发明专利

    公开(公告)号:CA1281389C

    公开(公告)日:1991-03-12

    申请号:CA529064

    申请日:1987-02-05

    Applicant: SONY CORP

    Abstract: A laminated printed coil structure comprising a wiring board having an insulating substrate, lead terminals and connecting pad portions connected to the lead terminals and formed on one surface of the insulating substrate, and a plurality of printed coil elements each having an insulating layer, coil patterns, a pair of terminals for the coil patterns and a connecting pad electricallky isolated from the terminals formed on the insulating layer. The printed coil elements are piled up and laminated on the wiring board such that the connecting pad portions of the wiring board, the terminals of the coil patterns on one of the printed coil elements and the connecting pad on another printed coil element are placed in alignment, and that each one terminal for the coil pattern on each of the printed coil elements to a respective lead terminal is connected, and that each coil pattern is from thence led out to the lead terminals of the wiring board.

    LEAD FRAME, ITS MANUFACTURING METHOD, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND ITS MANUFACTURING METHOD

    公开(公告)号:JP2001358280A

    公开(公告)日:2001-12-26

    申请号:JP2000136502

    申请日:2000-05-10

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To enhance heat dissipation properties and mechanical strength of a semiconductor integrated circuit device 1 in which mounting density is increased by stacking a plurality of lead frames 2 thereby mounting a semiconductor chip 7 three-dimensionally. SOLUTION: A plurality of lead frames 2, each mounting a semiconductor chip 7, are prepared wherein an insulation film 4 is provided, on one surface thereof, with a wiring film 3 (3a, 3b, 3c), an area 9 for mounting the chip 7 being connected with the wiring film 3, and an inter-lead frame connection area 10 where the insulation film 4 is exposed and, on the other surface thereof, with a heat sink 5 having an inter-lead frame connection opening 6 for partially exposing the wiring layer 3 through the insulation film 4. A three-dimensionally mounted semiconductor integrated circuit device 1 is constituted by stacking a plurality of lead frames 2 in the same direction through solder balls 11.

    LEAD FRAME AND ITS MANUFACTURE, SEMICONDUCTOR DEVICE AND ITS ASSEMBLING METHOD, AND ELECTRONIC EQUIPMENT

    公开(公告)号:JPH1174413A

    公开(公告)日:1999-03-16

    申请号:JP35424497

    申请日:1997-12-24

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To form bumps corresponding to the fine pitch of inner leads connected to metal films forming the bumps by improving the position accuracy of the forming positions of the bumps, by forming circuit wiring including inner leads by plating a metal after the metal films are formed on a base by plating. SOLUTION: After a semiconductor chip 12 is placed on a bounding stage 20, a lead frame 7 is positioned so that gold films 6 respectively forming the bumps of inner leads 7 may be positioned on electrode pads made of aluminum. Then, the front end sections of the inner leads 7 are collectively bonded to the bumps 6 with a hot tool 21. Since the gold films 6 forming the bumps are formed by plating, the adhesion between the bumps and a base can be improved and, since the growing speed of the gold films 6 is fast, the bonding strength of the bumps 6 to inner leads 5 can be made larger than that obtained by vapor deposition. In addition, the time required for forming the gold films to specified thicknesses can be shortened.

Patent Agency Ranking