公开(公告)号：JPH09139476A

公开(公告)日：1997-05-27

申请号：JP29567095

申请日：1995-11-14

Applicant: SONY CORP

Inventor： WATABE KOJI ,  SADAMOTO MIHO ,  MACHIDA AKIO ,  TANAKA NAOHIRO

IPC: H01L27/105 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To suppress the compositional deviation of ferroelectric material and the deterioration in dielectric characteristics, and to provide a ferroelectric material capacitor having excellent characteristics by a method wherein a layer consisting of a compound, having an excellent conductive pyrochroite type structure and containing a specific element, is arranged between a conductive ceramic electrode and the capacitor. SOLUTION: At least on either of the upper electrode layer and the lower electrode layer consisting of the conductive ceramic electrode 3 of a ferroelectric capacitor 1, a layer 4, consisting of a compound of good conductive pyrochroite type structure and containing at least an element contained in a ferroelectric material 2 and an element contained in conductive ceramic 3, is arranged between the electrode layer and the ferroelectric material 2 of and capacitor. For example, after formation of an RuO2 film 3 and a Pb2 O7 thin film 4 on a high resistance silicon substrate, a ferroelectric Pb (Zr, Ti) O3 layer 2 is formed. Besides, a Pb2 Ru2 O7 thin film 4 and an RuO2 film 3 are successively formed by lamination, and a capacitor structure is formed.

公开(公告)号：JPH0892749A

公开(公告)日：1996-04-09

申请号：JP22711994

申请日：1994-09-21

Applicant: SONY CORP

Inventor： WATABE KOJI ,  TANAKA NAOHIRO ,  SADAMOTO MIHO ,  KAWAKADO KOICHI

IPC: C01G55/00 ,  C23C18/12 ,  H01L29/40

Abstract: PURPOSE: To provide a producing method of a ruthenium oxide thin film, which is capable of producing a single phase ruthenium oxide thin film with a low cost and simple method and producing the ruthenium oxide thin film excellent in electrical property. CONSTITUTION: A precursor sol solution is prepared by pulverizing a lumpy ruthenium chloride as a raw material to make powdery and dissolving in ethanol as a solvent and is passed through a filter having

公开(公告)号：JPH07211136A

公开(公告)日：1995-08-11

申请号：JP1490194

申请日：1994-01-12

Applicant: SONY CORP

Inventor： TANAKA NAOHIRO ,  SADAMOTO MIHO

IPC: C04B35/00 ,  C01B13/14 ,  C04B35/495 ,  C04B35/64 ,  H01B3/00 ,  H01B3/12 ,  H01B19/00

Abstract: PURPOSE:To provide a high sintering density at a low baking temperature of 1000 deg.C or less even when content of boron is set low for improving dielectric characteristics in manufacturing a dielectric comprising composite oxide containing boron. CONSTITUTION:In a manufacturing method of a dielectric comprising baking oxides of boron and other elements, or oxide precursors of these for forming composite oxide of boron and the other elements, the oxides or precursors of the other elements than boron are temporarily baked to provide composite oxide of the other elements than boron. This composite oxide is mixed with the oxide or precursor of boron, and it is then primarily baked to provide composite oxide of boron and the other elements. A mixing ratio of boron is desirably 2-10% at mole ratio of baron in the dielectric.

公开(公告)号：JPH06339198A

公开(公告)日：1994-12-06

申请号：JP15426793

申请日：1993-05-31

Applicant: SONY CORP

Inventor： TANAKA NAOHIRO ,  SADAMOTO MIHO

IPC: H01L41/09 ,  H03H9/17 ,  H04R17/00

Abstract: PURPOSE:To realize an excellent electromechanical conversion characteristic, a desirable dielectric characteristic and an excellent temperature characteristic simultaneously in the piezoelectric sound piece vibrator made of a PZT. CONSTITUTION:The pillar piezoelectric type sound piece vibrator 1 made of a solid solution (PZT) comprising a PbZrO3 and a PbTiO3 and whose cross section is a regular polygon or a circle is formed such that its composition distribution is axis-symmetrical for a Zr/Ti ratio. In this case, it is preferred to decide the composition distribution of PZT such that the outer surface part of the pillar piezoelectric type sound piece vibrator 1 has a high conversion sensitivity between electric energy and mechanical energy for the inner part and the inner part has less temperature change in the resonance frequency for the outer surface part.

公开(公告)号：JPH06305733A

公开(公告)日：1994-11-01

申请号：JP12544793

申请日：1993-04-27

Applicant: SONY CORP

Inventor： TANAKA NAOHIRO ,  SADAMOTO MIHO

IPC: C01G33/00 ,  C01G35/00 ,  C04B35/00 ,  C04B35/495 ,  H01B3/12

Abstract: PURPOSE:To produce a dielectric material having a perovskite structure and capable of simultaneously attaining a high dielectric constant and flat temp. characteristics in an ordinary temp. region close to room temp. by sintering at a low temp. of about =2).