公开(公告)号：SG77227A1

公开(公告)日：2000-12-19

申请号：SG1999001313

申请日：1999-03-06

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  TSUYOSHI TOJO

IPC: H01L33/32 ,  H01L21/301 ,  H01L29/04 ,  H01L33/00 ,  H01L33/36 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/30

Abstract: It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer 2 made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate 1. In selective locations other than the location of a ridge stripe portion 11 and a mesa portion 12 along a portion of a semiconductor layer 2 where a cavity edge 3 should be made, namely, in locations at opposite sides of the mesa portion 12, stripe-shaped cleavage-assist grooves 4 are made to extend in parallel to the (11-20)-oriented surface of the semiconductor layer 2, and the semiconductor layer 2 and the sapphire substrate 1 are cleaved from the cleavage-assist groove 4 to make the cavity edge 3 made up of the cleavable surface of the semiconductor layer 2.

公开(公告)号：SG80066A1

公开(公告)日：2001-04-17

申请号：SG1999004215

申请日：1999-08-27

Applicant: SONY CORP

Inventor： HIROSHI YOSHIDA ,  TSUYOSHI TOJO ,  MASAFUMI OZAWA

IPC: H01L23/12 ,  H01L33/00 ,  H01S3/02 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H05K7/12

Abstract: A conductive mounting board provided in a package has a recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board. Heat generated in the semiconductor laser is radiated via the conductive mounting board, and short-circuit between the n-side electrode and the p-side electrode is prevented by the insulating mounting board. In an alternative semiconductor device, the p-side electrode of the semiconductor element is fixed to the conductive mounting board and the n-side electrode thereof projects from the conductive mounting board.