公开(公告)号：US20200006416A1

公开(公告)日：2020-01-02

申请号：US16565200

申请日：2019-09-09

Applicant: SONY CORPORATION

Inventor： Koichi BABA ,  Takashi KUBODERA ,  Toshihiko MIYAZAKI ,  Hiroaki AMMO

IPC: H01L27/146 ,  H01L25/16

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.The semiconductor device includes a first semiconductor substrate, a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate, and a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing the interface state of the first semiconductor substrate and the second semiconductor substrate, wherein at least two semiconductor substrates are stacked and the semiconductor substrates are electrically connected to each other, and the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.

公开(公告)号：US20180053802A1

公开(公告)日：2018-02-22

申请号：US15784699

申请日：2017-10-16

Applicant: SONY CORPORATION

Inventor： Koichi BABA ,  Takashi KUBODERA ,  Toshihiko MIYAZAKI ,  Hiroaki AMMO

IPC: H01L27/146 ,  H01L25/16

CPC classification number: H01L27/14634 ,  H01L25/167 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/11 ,  H01L2924/13091 ,  H01L2924/00

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.The semiconductor device includes a first semiconductor substrate, a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate, and a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing the interface state of the first semiconductor substrate and the second semiconductor substrate, wherein at least two semiconductor substrates are stacked and the semiconductor substrates are electrically connected to each other, and the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.

公开(公告)号：US20200267341A1

公开(公告)日：2020-08-20

申请号：US16061466

申请日：2016-12-08

Applicant: SONY CORPORATION

Inventor： Koichi BABA ,  Taiichiro WATANABE ,  Hirokazu EJIRI

IPC: H04N5/378 ,  G11C13/00 ,  H04L9/32

Abstract: The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.

公开(公告)号：US20160247851A1

公开(公告)日：2016-08-25

申请号：US15146599

申请日：2016-05-04

Applicant: SONY CORPORATION

Inventor： Koichi BABA ,  Takashi KUBODERA ,  Toshihiko MIYAZAKI ,  Hiroaki AMMO

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L25/167 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/11

Abstract: The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates.The semiconductor device includes a first semiconductor substrate, a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate, and a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing the interface state of the first semiconductor substrate and the second semiconductor substrate, wherein at least two semiconductor substrates are stacked and the semiconductor substrates are electrically connected to each other, and the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.