SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS
    1.
    发明申请
    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS 有权
    固态成像装置及其制造方法及电子设备

    公开(公告)号:US20160268322A1

    公开(公告)日:2016-09-15

    申请号:US15029717

    申请日:2014-10-14

    Abstract: There is provided a solid state imaging device including a pixel including a photoelectric conversion unit that generates and accumulates a charge according to a received light amount, a charge accumulation unit that accumulates the generated charge, a first transfer transistor that transfers the charge of the photoelectric conversion unit to the charge accumulation unit, a charge holding unit that holds the charge to read out as a signal, and a second transfer transistor that transfers the charge of the charge accumulation unit to the charge holding unit, in which a gate electrode of the first transfer transistor is formed to be buried up to a predetermined depth from a semiconductor substrate interface, and the charge accumulation unit is formed in a longitudinally long shape to be extended in a depth direction along a side wall of the gate electrode of the first transfer transistor to be buried therein.

    Abstract translation: 提供了一种固态成像装置,其包括:像素,包括根据接收的光量产生并累积电荷的光电转换单元;累积所产生的电荷的电荷累积单元;传送光电二极管的电荷的第一转移晶体管; 转换单元到电荷累积单元,电荷保持单元,其保持作为信号读出的电荷;以及第二传输晶体管,其将电荷累积单元的电荷传送到电荷保持单元,其中栅极电极 第一传输晶体管被形成为从半导体衬底界面掩埋到预定深度,并且电荷累积单元形成为沿着第一传输的栅电极​​的侧壁在深度方向上延伸的纵向长形状 晶体管被埋在其中。

    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

    公开(公告)号:US20190006411A1

    公开(公告)日:2019-01-03

    申请号:US16104802

    申请日:2018-08-17

    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM

    公开(公告)号:US20200267341A1

    公开(公告)日:2020-08-20

    申请号:US16061466

    申请日:2016-12-08

    Abstract: The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.

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