Abstract:
There is provided a solid state imaging device including a pixel including a photoelectric conversion unit that generates and accumulates a charge according to a received light amount, a charge accumulation unit that accumulates the generated charge, a first transfer transistor that transfers the charge of the photoelectric conversion unit to the charge accumulation unit, a charge holding unit that holds the charge to read out as a signal, and a second transfer transistor that transfers the charge of the charge accumulation unit to the charge holding unit, in which a gate electrode of the first transfer transistor is formed to be buried up to a predetermined depth from a semiconductor substrate interface, and the charge accumulation unit is formed in a longitudinally long shape to be extended in a depth direction along a side wall of the gate electrode of the first transfer transistor to be buried therein.
Abstract:
There is provided a solid-state image pickup device including: a semiconductor substrate (21); a photodiode (11A, 11B) formed in the semiconductor substrate; a transistor (10) having a gate electrode (14) part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer (13) provided between the gate electrode and the photodiode.
Abstract:
An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
Abstract:
There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.
Abstract:
An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
Abstract:
The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.
Abstract:
The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.
Abstract:
The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.
Abstract:
There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.
Abstract:
An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.