SQUARAINE-POLYMER-BASED AMMONIUM/NITROGEN MONOXIDE TWO-COMPONENT SENSOR, AS WELL AS PREPARATION METHOD AND APPLICATION THEREOF

    公开(公告)号:US20190242842A1

    公开(公告)日:2019-08-08

    申请号:US16264604

    申请日:2019-01-31

    CPC classification number: G01N27/126 C08G73/02

    Abstract: The invention discloses a squaraine-polymer-based ammonium/nitrogen monoxide two-component sensor, as well as a preparation method and application thereof. A preparation manner and condition for the sensor are optimized. The squaraine polymer containing azo functional group based ammonium/nitrogen monoxide two-component sensor comprises an interdigital electrode and a coating material with which the interdigital electrode is coated. The coating material is a squaraine polymer containing azo functional group and has high sensing selectivity for ammonium and nitrogen monoxide, the minimum limit of detection thereof is 1 ppb and the response/reversion time is 82s/185s. The sensing performance of the sensor for nitrogen monoxide is also tested, the minimum limit of detection can reach 40 ppb and the response/reversion time is 112s/921s.

    AUTO-POLYMERIZATION ELECTRIC STORAGE MATERIAL BASED ON DOPAMINE, PREPARATION METHOD THEREOF AND APPLICATION TO ELECTRIC STORAGE DEVICE THEREOF

    公开(公告)号:US20190319193A1

    公开(公告)日:2019-10-17

    申请号:US16380809

    申请日:2019-04-10

    Abstract: The invention discloses a dopamine-based self-polymerization electric storage material and a preparation method thereof and the application thereof in an electric storage device, and the self-polymerization of dopamine is generated by solving the problems of complicated preparation process, poor environment and high temperature stability of the current organic electric storage material. The organic electric storage device prepared by the polymer into a sandwich structure successfully realizes the organic electric storage behavior. In the preparation process, the molecular synthesis and the device preparation are completed simultaneously, the device environment and the high temperature stability are good, and it is of great significance to the research progress of the organic electric storage technology and practical value.

    HUMIDITY SENSOR BASED ON SQUARAINE POLYMER, PREPARATION METHOD AND USE THEREOF

    公开(公告)号:US20170342201A1

    公开(公告)日:2017-11-30

    申请号:US15608010

    申请日:2017-05-30

    Abstract: The invention discloses a humidity sensor based on squaraine polymer and the preparation method and use thereof. Specifically, the humidity sensor disclosed by the invention comprises a coating material and an interdigital electrode, wherein the coating material is a squaraine polymer as shown in formula I, n is an integer of 40-50, the coating material is brushed on the interdigital electrode, and the thickness is 100-400 microns. The humidity sensor disclosed by the invention has the advantages that the preparation is convenient, and the operation is simple; the response time is short, and the response for humidity change is higher than that of common metallic oxides; the recovery time is short, and the device performance is stable; the humidity hysteresis of the device is high under high humidity environment.

    ORGANIC ELECTRIC MEMORY DEVICE BASED ON PHOSPHONIC ACID OR TRICHLOROSILANE-MODIFIED ITO GLASS SUBSTRATE AND PREPARATION METHOD THEREOF

    公开(公告)号:US20170324052A1

    公开(公告)日:2017-11-09

    申请号:US15581739

    申请日:2017-04-28

    Abstract: The invention discloses an organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and a preparation method thereof. The preparation method comprises the following steps of 1) cleaning the ITO glass substrate; 2) forming a phosphonic acid or trichlorosilane modified layer; 3) forming an organic coating film layer; and 4) forming an electrode, and finally obtaining the organic electric memory device. By adoption of the method, a series of sandwich-type organic electric memory devices are prepared; meanwhile, the preparation method is simple, convenient, fast, and easy to operate; compared with the conventional device, the turn-on voltage of the organic electric memory device is lowered, the yield of the multi-level system is improved, and the problem of relatively low ternary productivity at present is solved; and therefore, the organic electric memory device has extremely high application value in the future memory fields.

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