公开(公告)号：US20240355952A1

公开(公告)日：2024-10-24

申请号：US18245943

申请日：2022-01-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang WANG ,  Linhao LI ,  Guoqiang LI ,  Hongsheng JIANG

IPC: H01L31/108 ,  H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/108 ,  H01L31/03048 ,  H01L31/1848

Abstract: The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector′ in the UV solar-blind band.