公开(公告)号：US20160218006A1

公开(公告)日：2016-07-28

申请号：US15026726

申请日：2014-12-05

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Fangliang GAO ,  Yunfang GUAN ,  Lei WEN ,  Jingling LI ,  Shuguang ZHANG

IPC: H01L21/02 ,  H01L29/201

CPC classification number: H01L21/02546 ,  C30B25/183 ,  C30B29/42 ,  H01L21/02052 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L29/201 ,  H01L31/03046 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544

Abstract: The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In0.4Ga0.6As buffer layer, a high temperature In0.4Ga0.6As buffer layer and an In0.53Ga0.47As expitaxial film, arranged sequentially, wherein the low temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 350˜380®C.; the high temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature In0.4Ga0.6As buffer layer and the thickness of the high temperature In0.4Ga0.6As buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

Abstract translation: 本发明公开了一种在Si衬底上生长的InGaAs膜，它包括Si衬底，低温In0.4Ga0.6As缓冲层，高温In0.4Ga0.6As缓冲层和In0.53Ga0.47As外延膜， 其中低温In0.4Ga0.6As缓冲层是在350〜380℃的温度下生长的In 0.4 Ga 0.6 As缓冲层; 高温In0.4Ga0.6As缓冲层是在500〜540℃的温度下生长的In 0.4 Ga 0.6 As缓冲层，低温In0.4Ga0.6As缓冲层的厚度和 高温In0.4Ga0.6As缓冲层的厚度为10〜20nm。 本发明还公开了一种制备InGaAs薄膜的方法。 在本发明的Si衬底上生长的InGaAs膜具有良好的晶体质量，几乎完全松弛，并且具有简单的制备工艺。

公开(公告)号：US20180090316A1

公开(公告)日：2018-03-29

申请号：US15563599

申请日：2016-08-18

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Fangliang GAO ,  Lei WEN ,  Shuguang ZHANG ,  Jingling LI

IPC: H01L21/02 ,  C30B29/42 ,  C30B25/18 ,  C30B25/10 ,  H01L21/324

CPC classification number: H01L21/02505 ,  C30B25/10 ,  C30B25/183 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/02694 ,  H01L21/3245 ,  H01L31/1852 ,  Y02E10/544

Abstract: Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.