公开(公告)号：US20220157609A1

公开(公告)日：2022-05-19

申请号：US17598891

申请日：2019-10-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Peiye SUN ,  Zhikun LIU ,  Lijun WAN ,  Dingbo CHEN ,  Xianfeng QUE ,  Shunan YAO ,  Runze LI

IPC: H01L21/3065 ,  H01J37/32

Abstract: The present invention discloses a precise etching apparatus for preparing a recessed-gate enhancement device and an etching method for the same. The apparatus provided by the present invention includes an inductively-coupled plasma etching chamber, a current detection device, an inductive coil, a radio frequency source, a mechanical pump, and a molecular pump. The current detection device is connected with the inductively-coupled plasma etching chamber. The inductive coil is connected with the inductively-coupled plasma etching chamber. The radio frequency source is connected with the inductive coil. The mechanical pump and the molecular pump are connected with the inductively-coupled plasma etching chamber. When a displayed current value is zero during an HEMT device preparation process, the apparatus shuts off a two-dimensional electron gas channel, and etching is terminated, thereby preventing gate leakage caused by over-etching or damage to the two-dimensional electron gas channel, thus achieving precise etching.