公开(公告)号：WO2017045185A1

公开(公告)日：2017-03-23

申请号：PCT/CN2015/089884

申请日：2015-09-17

Applicant: SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA

Inventor： CHENG, Chun ,  SHI, Run ,  HUANG, Chengzi ,  SHI, Yuan ,  BAO, Shuhan ,  LI, Dawen ,  ZHANG, Linfei

IPC: H01L21/308 ,  H01L21/306 ,  B81C1/00

CPC classification number: B81C1/00 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C1/00031 ,  H01L21/465

Abstract: A method of fabricating nanowire arrays is provided, which comprises: preparing nanowires by means of vapor transport process; sculpturing of the nanowires, which comprises: the nanowires being coated with a plurality of photoresist layers to form an NAs@PR matrix, the NAs@PR matrix being exposed to a UV light, and the NAs@PR matrix being dipped into an etching solution.

Abstract translation: 提供了制造纳米线阵列的方法，其包括：通过蒸气传输方法制备纳米线; 纳米线的雕刻，其包括：纳米线被涂覆有多个光致抗蚀剂层以形成NAs @ PR基质，将NAs @ PR基质暴露于UV光，并将NAs @ PR基质浸入蚀刻溶液中 。