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公开(公告)号:EP2362003B1
公开(公告)日:2017-07-05
申请号:EP10275131.0
申请日:2010-12-20
Applicant: SPP Process Technology Systems UK Limited
Inventor: Giles, Katherine , Price, Andrew , Burgess, Stephen Robert , Archard, Daniel Thomas
IPC: C23C16/40 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56
CPC classification number: C23C16/402 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56
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公开(公告)号:EP2362003A2
公开(公告)日:2011-08-31
申请号:EP10275131.0
申请日:2010-12-20
Applicant: SPP Process Technology Systems UK Limited
Inventor: Giles, Katherine , Price, Andrew , Burgess, Stephen Robert , Archard, Daniel Thomas
IPC: C23C16/40 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56
CPC classification number: C23C16/402 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56
Abstract: This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1.
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公开(公告)号:EP2362003A3
公开(公告)日:2011-09-07
申请号:EP10275131.0
申请日:2010-12-20
Applicant: SPP Process Technology Systems UK Limited
Inventor: Giles, Katherine , Price, Andrew , Burgess, Stephen Robert , Archard, Daniel Thomas
IPC: C23C16/40 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56
CPC classification number: C23C16/402 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56
Abstract: This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1.
Abstract translation: 本发明涉及一种在室内使用等离子体增强化学气相沉积(PECVD)在低于250℃的温度下沉积无机SiO 2膜的方法,该室包括供应原硅酸四乙酯(TEOS)和O 2或其来源作为前体与O 2 / TEOS之比在15:1和25:1之间。
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