公开(公告)号：EP2362003B1

公开(公告)日：2017-07-05

申请号：EP10275131.0

申请日：2010-12-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Giles, Katherine ,  Price, Andrew ,  Burgess, Stephen Robert ,  Archard, Daniel Thomas

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

公开(公告)号：EP2362003A2

公开(公告)日：2011-08-31

申请号：EP10275131.0

申请日：2010-12-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Giles, Katherine ,  Price, Andrew ,  Burgess, Stephen Robert ,  Archard, Daniel Thomas

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

Abstract: This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1.

公开(公告)号：EP2362003A3

公开(公告)日：2011-09-07

申请号：EP10275131.0

申请日：2010-12-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Giles, Katherine ,  Price, Andrew ,  Burgess, Stephen Robert ,  Archard, Daniel Thomas

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

Abstract: This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1.

Abstract translation: 本发明涉及一种在室内使用等离子体增强化学气相沉积（PECVD）在低于250℃的温度下沉积无机SiO 2膜的方法，该室包括供应原硅酸四乙酯（TEOS）和O 2或其来源作为前体与O 2 / TEOS之比在15：1和25：1之间。