公开(公告)号：TWI518201B

公开(公告)日：2016-01-21

申请号：TW099144743

申请日：2010-12-20

Applicant: SPP處理科技系統英國有限公司 ,  SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED

Inventor： 吉爾斯 凱瑟琳 ,  GILES, KATHERINE ,  普萊斯 安德魯 ,  PRICE, ANDREW ,  柏格斯 史蒂芬R ,  BURGESS, STEPHEN ROBERT ,  亞賈德 丹尼爾T ,  ARCHARD, DANIEL THOMAS

IPC: C23C16/40 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01L21/316

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

公开(公告)号：TWI506664B

公开(公告)日：2015-11-01

申请号：TW099143464

申请日：2010-12-13

Applicant: SPP處理科技系統英國有限公司 ,  SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED

Inventor： 麥可尼爾 約翰 ,  MACNEIL, JOHN ,  班納特 保羅G ,  BENNETT, PAUL GEORGE

IPC: H01J27/02 ,  H01J37/08 ,  C23C14/46

CPC classification number: H01J27/022 ,  H01J37/24 ,  H01J2237/0206 ,  H01J2237/08 ,  H01J2237/3146

公开(公告)号：TWI520210B

公开(公告)日：2016-02-01

申请号：TW099106273

申请日：2010-03-04

Applicant: SPP處理科技系統英國有限公司 ,  SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED

Inventor： 安塞爾 奧利薇 ,  ANSELL, OLIVER ,  巴瑞斯 安東尼 ,  BARRASS, ANTHONY ,  班尼特 保羅 ,  BENNETT, PAUL ,  托塞爾 大衛 ,  TOSSELL, DAVID

IPC: H01L21/3065

CPC classification number: H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

公开(公告)号：TWI479042B

公开(公告)日：2015-04-01

申请号：TW099101934

申请日：2010-01-25

Applicant: SPP處理科技系統英國有限公司 ,  SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED

Inventor： 卡路特斯 馬克I ,  CARRUTHERS, MARK IAN ,  柏格斯 史蒂芬 ,  BURGESS, STEPHEN ,  維爾拜 安東尼 ,  WILBY, ANTHONY ,  瑞斯托吉 阿密特 ,  RASTOGI, AMIT ,  瑞區 保羅 ,  RICH, PAUL ,  瑞馬 尼可拉斯 ,  RIMMER, NICHOLAS

IPC: C23C14/34

CPC classification number: C23C14/046 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873

公开(公告)号：WO2011104550A2

公开(公告)日：2011-09-01

申请号：PCT/GB2011/050361

申请日：2011-02-24

Applicant: SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED ,  DITIZIO, Robert

Inventor： DITIZIO, Robert

IPC: H01L21/768 ,  B81B1/00

CPC classification number: H01L21/76898 ,  B81B2207/07 ,  B81C1/00087 ,  B81C2201/0112 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3065 ,  H01L21/30655

Abstract: Vias are formed in a substrate using an etch process that forms an undercut profile below the mask layer. The vias are coated with a conformal insulating layer and an etch process is applied to the structures to remove the insulating layer from horizontal surfaces while leaving the insulating layers on the vertical sidewalls of the vias. The top regions of the vias are protected during the etchback process by the undercut hardmask.

Abstract translation: 使用在掩模层下方形成底切轮廓的蚀刻工艺在衬底中形成通孔。 通孔用保形绝缘层涂覆，并且将蚀刻工艺施加到结构以从绝缘层移除绝缘层，同时将绝缘层留在通孔的垂直侧壁上。 通过底切硬掩模在回蚀过程中保护通孔的顶部区域。

公开(公告)号：EP2310552A2

公开(公告)日：2011-04-20

申请号：EP09784690.1

申请日：2009-07-13

Applicant: SPP Process Technology Systems UK Limited

Inventor： MACNEIL, John ,  BAILEY, Robert, Jeffrey

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/4412 ,  C23C16/45519 ,  C23C16/45551

Abstract: This invention relates to a gas delivery device for use in low pressure Atomic Layer Deposition at a substrate location. The device includes a first generally elongating injector (21) for supplying process gas to a process zone (22). A first exhaust zone (23) circumjacent the process zone (22); and a further injector (25) circumjacent the first exhaust zone for supplying purge or inert gas at outlet (26) surrounding the process zone (22, 24) for facing the location circumjacent the outlet to define at least a partial gas seal.

公开(公告)号：EP2214199A1

公开(公告)日：2010-08-04

申请号：EP10275003.1

申请日：2010-01-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Tossell, David

IPC: H01L21/3065 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/6831 ,  H01L21/68735

Abstract: A method is for plasma etching elongate features in a generally planar workpiece of a type located in a chamber. The method includes etching a test workpiece in a flat configuration in the chamber, determining the respective angle of a longitudinal portion of the features relative to an axis passing orthogonally through the workpiece, and determining the curvature of the workpiece, which would have been required to reduce the angles, at least over a central portion of the workpiece, substantially to 0°. The method further includes processing a further workpiece of the same type whilst it is curved with the determined curvature.

Abstract translation: 一种方法是在位于腔室中的类型的大致平面的工件中等离子体蚀刻细长特征。 该方法包括在腔室中以平坦构型蚀刻测试工件，确定特征相对于通过工件正交通过的轴线的纵向部分的相应角度，并确定工件的曲率，这将是必需的 至少在工件的中心部分上将角度减小到0°。 该方法还包括在以所确定的曲率弯曲的同时处理相同类型的另外的工件。

公开(公告)号：EP2237309B1

公开(公告)日：2019-10-02

申请号：EP10154656.2

申请日：2010-02-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Ansell, Oliver ,  Barrass, Anthony ,  Bennett, Paul ,  Tossell, David

IPC: H01J37/32 ,  H01L21/67

公开(公告)号：EP1935005B1

公开(公告)日：2016-12-21

申请号：EP06794716.8

申请日：2006-10-11

Applicant: SPP Process Technology Systems UK Limited

Inventor： BRANCHER, Carl, David, M. ,  MACNEIL, John ,  TROWELL, Robert, Kenneth

IPC: B44C1/22 ,  H01L21/306 ,  H01L21/67 ,  C23C16/455

CPC classification number: H01L21/306 ,  B44C1/227 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/45589 ,  H01L21/6719 ,  H01L21/67207

公开(公告)号：EP2333807A3

公开(公告)日：2015-11-18

申请号：EP10275127.8

申请日：2010-12-14

Applicant: SPP Process Technology Systems UK Limited

Inventor： Macneil, John ,  Bennet, Paul George

IPC: H01J27/02 ,  H01J37/24

CPC classification number: H01J27/022 ,  H01J37/24 ,  H01J2237/0206 ,  H01J2237/08 ,  H01J2237/3146

Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pulsed power to the grid (13) to extract the ions.

Abstract translation: 本发明涉及一种用于包括用于提取离子的栅格（13）和用于向栅格（13）提供脉冲功率以提取离子的电源的非导电目标（14）的离子束源（10）。