公开(公告)号：JPH1174378A

公开(公告)日：1999-03-16

申请号：JP17768898

申请日：1998-06-24

Applicant: ST MICROELECTRON INC

Inventor： CHAN TSUI CHIU ,  BRYANT FRANK RANDOLPH

IPC: H01L21/8244 ,  H01L27/11 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide an SRAM(static random access memory) cell and the manufacture for reducing a memory area without degrading performance. SOLUTION: Two P type bulk silicon pull-down transistors 18 and 22 formed by two polysilicon layers, two N type active gate type pull-up TFTs(thin film transistors) 16 and 20, and two path gates 28 and 30, are mutually connected by four shared contacts 24 and 26. One polysilicon 1 of the polysilicon layers is turned to salicide and is provided with a gate electrode for the P type pull- down transistors 18 and 22, and the other polysilicon 2 is provided with a desired polysilicon 2 stringer disposed along the side part edge of the side part of the polysilicon 1 gate electrode and forms the channel area of the pull-up TFTs 16 and 20.