公开(公告)号：DE69535348D1

公开(公告)日：2007-02-08

申请号：DE69535348

申请日：1995-05-24

Applicant: ST MICROELECTRONICS INC

Inventor： HODGES ROBERT L ,  BRYANT FRANK R

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/768 ,  H01L21/8247 ,  H01L21/8248 ,  H01L23/522 ,  H01L29/51 ,  H01L29/78

Abstract: A method is provided for forming an improved device dielectric of a semiconductor integrated circuit, and an integrated circuit formed according to the same. For scaling geometries for use in the submicron regime, a composite dielectric layer used as a device dielectric is formed over a plurality of active areas adjacent to a field oxide region. The composite dielectric layer is formed before the field oxide region is formed and comprises a non-porous silicon nitride layer. The non-porous silicon nitride layer preferably comprises a thin deposited silicon nitride layer overlying a thin nitridized region of the substrate. The silicon nitride layer is partially oxidized during the subsequent formation of a field oxide region between the plurality of active areas. An oxide layer may be formed over the silicon nitride layer before the formation of the field oxide region which will then be densified during the field oxide formation. The composite dielectric layer is then patterned and etched to form the dielectric portion of various integrated circuit devices.