公开(公告)号：JP2000040742A

公开(公告)日：2000-02-08

申请号：JP17604899

申请日：1999-06-22

Applicant: ST MICROELECTRONICS INC

Inventor： CHAN TSIU CHIU ,  ANTHONY M CHU ,  SMITH GREGORY C

IPC: C23C18/31 ,  C25D3/46 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To use the low specific resistance mutual metal connecting body in an integrated circuit by forming the deep groove in an insulating layer along a contact region by etching, exposing a part of the contact region, and filling the upper groove, wherein the mutual connecting body is specified and formed, with silver and the like by plating. SOLUTION: An insulating layer 112 is formed on insulating layers 104 and 106 and conductive plug 110 along a substrate 102. Then, the insulating layer 112 is formed in the pattern and is selectively etched. Thus, a groove 114 is formed. In the groove 114, a part of the conductive plug 110 is exposed and extended on the insulating layers 104 and 106 to the other conductive plug, in contact with the different device or the input-output pads. The path of the mutual connecting body formed in the groove 114 is specified. Then, the upper part of the insulating layer 112 and the inside of the groove 114 are plated. A silver layer 116 is formed, and the groove 114 is filled. Thereafter, the part of the silver layer 116 at the upper side than the insulating layer 112 is removed through CMP, and the mutual connecting body is formed.

公开(公告)号：DE69527344D1

公开(公告)日：2002-08-14

申请号：DE69527344

申请日：1995-12-05

Applicant: ST MICROELECTRONICS INC

Inventor： MILLER ROBERT O ,  SMITH GREGORY C

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/28 ,  H01L23/532

Abstract: An electrical connection structure is provided for protecting a barrier metal layer within a contact opening during the formation of an aluminum interconnection layer overlying a tungsten plugged connection structure. The deposited tungsten plug overlying the barrier metal layer is etched back sufficiently to create a slight recess at the opening. A thin layer of tungsten is then selectively deposited for filling the recess. This layer acts as an etch stop during aluminum interconnection layer formation and protects the underlying barrier metal layer.

公开(公告)号：DE69534688D1

公开(公告)日：2006-01-19

申请号：DE69534688

申请日：1995-10-27

Applicant: ST MICROELECTRONICS INC

Inventor： CHAN TSIU CHIU ,  SMITH GREGORY C

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/60 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78

公开(公告)号：DE69533823D1

公开(公告)日：2005-01-05

申请号：DE69533823

申请日：1995-12-05

Applicant: ST MICROELECTRONICS INC

Inventor： SMITH GREGORY C

IPC: C23F1/02 ,  C23F4/00 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522

Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

公开(公告)号：DE69527344T2

公开(公告)日：2003-02-27

申请号：DE69527344

申请日：1995-12-05

Applicant: ST MICROELECTRONICS INC

Inventor： MILLER ROBERT O ,  SMITH GREGORY C

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/28 ,  H01L23/532

Abstract: An electrical connection structure is provided for protecting a barrier metal layer within a contact opening during the formation of an aluminum interconnection layer overlying a tungsten plugged connection structure. The deposited tungsten plug overlying the barrier metal layer is etched back sufficiently to create a slight recess at the opening. A thin layer of tungsten is then selectively deposited for filling the recess. This layer acts as an etch stop during aluminum interconnection layer formation and protects the underlying barrier metal layer.