公开(公告)号：JP2003203380A

公开(公告)日：2003-07-18

申请号：JP2002366524

申请日：2002-12-18

Applicant: ST MICROELECTRONICS INC

Inventor： ANTHONY M CHU ,  THOMAS DANIELLE A

IPC: G02B5/08 ,  G02B6/42 ,  G02B6/43 ,  G11B7/12 ,  G11B7/135 ,  G11B7/22

Abstract: PROBLEM TO BE SOLVED: To provide an improved electro-optic device that communicates with an optical disk and a method for manufacturing the electro-optic device. SOLUTION: Light from a laser diode is directed by mirrors on angled surfaces of an optical unit through a first lens at an optical disc. The light returns from the disc on a parallel path through a second lens and is directed at a photodetector. A semiconductor device controls the operation of the laser diode and receives signals from the photodetector for processing. The optical unit is formed from one or two glass elements cut from a larger glass wafer or wafers using photolithographic techniques. The mirrors are formed by thin films deposited on angled glass surfaces formed by selective plasma etching of the wafers. At least one mirror is partially reflective and is formed by depositing a thin film of titanium nitride. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003133427A

公开(公告)日：2003-05-09

申请号：JP2002156788

申请日：2002-05-30

Applicant: ST MICROELECTRONICS INC

Inventor： THOMAS DANIELLE A

IPC: H01L21/822 ,  H01L27/04 ,  H01L49/00 ,  H03H3/007 ,  H03H9/24

Abstract: PROBLEM TO BE SOLVED: To provide a technique for integrating miniature resonator in an integrated circuit chip as a part of a semiconductor manufacturing process. SOLUTION: A cantilevered beam is formed in a cavity to an accurate length by isotropically etching a fast-etching material, such as hydrogen sillsquioxane. The cavity is initially filled with a slow-etching material. The selectivity of the etch rates of the material within the cavity relative to the material defining the walls of the cavity permits accurate control of the length of a free end of the cantilevered beam. The resonant frequency of the cantilevered beam can be tuned to a narrow predetermined range by laser trimming.

公开(公告)号：JP2002198503A

公开(公告)日：2002-07-12

申请号：JP2001306639

申请日：2001-10-02

Applicant: ST MICROELECTRONICS INC

Inventor： THOMAS DANIELLE A ,  THOMAS GILLES E

IPC: H01L27/14 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L27/146 ,  H01L29/732 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit device having a photodetector and a method of manufacturing the circuit device. SOLUTION: In the integrated circuit device, the photodetector is integrated with a bipolar transistor containing a high-speed vertical NPN transistor having polysilicon emitter on a single semiconductor chip. The photodetector has a nitride silicon layer which works as a reflection preventing film. The nitride silicon layer and oxide layers on both sides of the silicon layer insulate the end section of the polysilicon emitter from a transistor area under the emitter. Consequently, parasitic capacitances are minimized and, at the same time, a high-frequency response is achieved.

公开(公告)号：DE69941866D1

公开(公告)日：2010-02-11

申请号：DE69941866

申请日：1999-02-17

Applicant: ST MICROELECTRONICS INC

Inventor： THOMAS DANIELLE A ,  BRYANT FRANK RANDOLPH

IPC: H01L21/30 ,  G06K9/00 ,  G06K9/20

Abstract: A structure and method for creating an integrated circuit passivation (24) comprising, a circuit (16), a dielectric (18), and metal plates (20) over which an insulating layer (26) is disposed that electrically and hermetically isolates the circuit (16), and a discharge layer (32) that is deposited to form a passivation (24) that protects the circuit (16) from electrostatic discharges caused by, e.g., a finger, is disclosed.

公开(公告)号：DE60207184D1

公开(公告)日：2005-12-15

申请号：DE60207184

申请日：2002-12-04

Applicant: ST MICROELECTRONICS INC

Inventor： CHIU ANTHONY M ,  THOMAS DANIELLE A

IPC: G02B5/08 ,  G02B6/42 ,  G02B6/43 ,  G11B7/12 ,  G11B7/135 ,  G11B7/22 ,  G02B6/00

Abstract: 028 Light from a laser diode is directed by mirrors on angled surfaces of an optical unit through a first lens at an optical disc. Light returns from the disc on a parallel path through a second lens and is directed at a photodetector. A semiconductor device controls the operation of the laser diode and receives signals form the photodetector for processing. The optical unit is formed from one or two glass elements cut from a larger glass wafer or wafers using photolithographic techniques. The mirrors are formed by thin films deposited on angled glass surfaces formed by selective plasma etching of the wafers. At least one mirror is partially reflective and is formed by depositing a thin film of titanium nitride.

公开(公告)号：DE69924697D1

公开(公告)日：2005-05-19

申请号：DE69924697

申请日：1999-12-23

Applicant: ST MICROELECTRONICS INC

Inventor： LEPERT ARNAUD YVES ,  THOMAS DANIELLE A ,  DO-BENTO-VIEIRA ANTONIO

IPC: H01L27/04 ,  A61B5/117 ,  G01B7/28 ,  G01B7/34 ,  G06K9/00 ,  G06T1/00 ,  H01L21/822

Abstract: A structure and method is disclosed for grounding an electrostatic discharge device of an integrated circuit to dissipate electrostatic charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry and a conductive layer disposed over the underlying dielectric layer, wherein the conductive layer diffuses electrostatic charges at the surface of the integrated circuit to ground. The conductive material not only dissipates electrostatic charges to the ground, but may also protect at least a portion of the edge of the sensor chip from mechanical stress.