公开(公告)号：DE50212030D1

公开(公告)日：2008-05-15

申请号：DE50212030

申请日：2002-11-14

Applicant: ST MICROELECTRONICS NV

Inventor： WAGNER MICHAEL ,  RIEVE PETER ,  SEIBEL KONSTANTIN

IPC: H01L31/0216 ,  H01L27/146 ,  H04N9/04

公开(公告)号：AU2002342545A1

公开(公告)日：2003-05-12

申请号：AU2002342545

申请日：2002-10-24

Applicant: ST MICROELECTRONICS NV

Inventor： WAGNER MICHAEL ,  RIEVE PETER ,  SEIBEL KONSTANTIN

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0376

公开(公告)号：DE50211700D1

公开(公告)日：2008-03-27

申请号：DE50211700

申请日：2002-10-24

Applicant: ST MICROELECTRONICS NV

Inventor： RIEVE PETER ,  SEIBEL KONSTANTIN ,  WAGNER MICHAEL

IPC: H01L31/00 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/18

公开(公告)号：AU2003250051A1

公开(公告)日：2004-02-02

申请号：AU2003250051

申请日：2003-07-14

Applicant: ST MICROELECTRONICS NV

Inventor： WALDER MARCUS ,  SEIBEL KONSTANTIN ,  PRIMA JENS ,  MIRHAMED ARASH ,  RIEVE PETER

IPC: H01L27/146 ,  H01L31/105

Abstract: A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent conductive oxide (TCO) layer, and an intrinsic absorption layer with a thickness between 300 nm and 600 nm. The pixel back electrodes are disposed over the intermetal dielectric layer, which is disposed over the ASIC. The vias connect to the pixel back electrodes and the metal contacts, which are formed in the intermetal dielectric layer. The TCO is disposed above the intrinsic absorption layer, which is disposed above the pixel back electrodes.

公开(公告)号：AU2002321022A1

公开(公告)日：2002-11-25

申请号：AU2002321022

申请日：2002-05-15

Applicant: ST MICROELECTRONICS NV

Inventor： RONNEBERGER REINHARD ,  SEIBEL KONSTANTIN ,  PRIMA JENS ,  LULE TAREK ,  RIEVE PETER ,  WALDER MARCUS ,  SCHOLZ MARKUS

IPC: H01L27/146 ,  H01L31/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0376

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.