公开(公告)号：JP2002334589A

公开(公告)日：2002-11-22

申请号：JP2002026723

申请日：2002-02-04

Applicant: ST MICROELECTRONICS SA

Inventor： FOURNEL RICHARD ,  AITOUARAB LEILA SEDJAI

IPC: G01R31/28 ,  G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  G11C16/34 ,  G11C29/12 ,  G11C29/00

Abstract: PROBLEM TO BE SOLVED: To prevent a read error caused by variation of a property of a reference memory cell. SOLUTION: This method is a method for refreshing a reference memory cell (Cref) in a non-volatile memory. This method has a step in which the reference cell (Cref) and a test cell (Cveri) are simultaneously selected during read, read signals are compared when a signal read by the reference cell is smaller than a signal read by the test cell, and refresh signals (Sr1, Sr2, Sr3) are outputted to the reference cell (Cref). This method is applied to an electronic memory of a non-volatile type.