公开(公告)号：FR2815174A1

公开(公告)日：2002-04-12

申请号：FR0012806

申请日：2000-10-06

Applicant: ST MICROELECTRONICS SA

Inventor： GUYADER FRANCOIS ,  AMAUD FRANK

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786

Abstract: The invention concerns a method for forming, in a substrate (1) having a first type of conductivity, a MOS transistor, comprising the following steps: a) forming on the substrate an insulated gate (3); b) implanting a doping agent having a second type of conductivity; c) forming on the edges of the gate silicon nitride spacers; d) simultaneously oxidising the apparent surfaces of the substrate, the gate and the spacers; and e) drain and source implantation.